AONR21357

Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 21A/34A 8DFN

Alpha & Omega Semiconductor Inc. AONR21357
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MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

AONR21357 specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C21A (Ta), 34A (Tc)
Power dissipation5W (Ta), 30W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.3V @ 250µA
Rds on (Max) @ id, vgs7.8mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs70 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2830 pF @ 15 V
AONR21357
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