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Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

AON5802A specifications
ParameterValue
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C7.2A
Power - max1.7W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual) Common Drain
Case6-WFDFN Exposed Pad
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs20mOhm @ 7.2A, 4.5V
Gate charge (Qg) (Max) @ vgs10.7nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds1115pF @ 15V