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Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

AON1605_001 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C700mA (Ta)
Power dissipation900mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case3-UFDFN
Vgs(th) (Max) @ id1.1V @ 250µA
Rds on (Max) @ id, vgs710mOhm @ 400mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.75 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds50 pF @ 10 V