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Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

AO4407A_102 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)6V, 20V
Current - continuous drain (Id) @ 25°C12A (Ta)
Power dissipation3.1W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs11mOhm @ 12A, 20V
Gate charge (Qg) (Max) @ vgs39 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2600 pF @ 15 V