{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"VS-3C20ET07T-M3","brand":"Vishay","brandSlug":"vishay","productSlug":"VS-3C20ET07T-M3","canonicalUrl":"https://icboms.com/vishay/VS-3C20ET07T-M3","factsUrl":"https://icboms.com/api/mcp/products/VS-3C20ET07T-M3","rawCanonicalId":null},"summary":{"shortDescription":"Vishay VS-3C20ET07T-M3, 650 V Silicon Carbide Schottky Diode, 20 A average rectified, 0 ns reverse recovery, TO-220-2 through-hole package, -55°C to 175°C junction.","salesMarkdown":"## SiC Schottky — zero-recovery switching at 650 V, 20 A The VS-3C20ET07T-M3 is a 650 V, 20 A silicon carbide Schottky diode from Vishay's Gen 3 merged-pin family. Its defining spec is a reverse recovery time of 0 ns — that is not a rounded number; the SiC Schottky barrier simply has no stored charge to sweep out, so the recovery is purely capacitive and effectively instantaneous. ## Thermal headroom — 175 °C junction without derating That 175 °C ceiling is 25 °C higher than typical silicon fast-recovery diodes, which means the SiC die can sit closer to the hot end of a PFC choke or motor-drive heatsink without needing to derate the forward current. For a 20 A part, that extra margin often saves a heatsink fin or lets you run natural convection where a silicon diode would need forced air. ## Forward drop and leakage — the real-world losses Maximum forward voltage is 1.5 V at 20 A and 25 °C junction. At that current the conduction loss is 30 W peak — a number that drives the heatsink selection. Reverse leakage is 100 µA at 650 V, 25 °C; it rises with temperature, but the SiC leakage curve is far flatter than silicon, so at 150 °C the leakage power is still a small fraction of the conduction loss. ## Package and mounting — TO-220AC with standard tab Supplied in a TO-220-2 (TO-220AC) through-hole package. The two-lead format — anode and cathode — mates with any standard TO-220 heatsink clip or screw-mount tab. The through-hole body suits point-to-point wiring, terminal-block layouts, and rework-friendly assemblies where a surface-mount D2PAK would complicate the thermal path. No last-time-buy notice or obsolescence date is published. ROHS3 compliant. For a power diode that goes into a multi-year production program — PFC stage, EV onboard charger, industrial SMPS — this means you can qualify it into the BOM without planning an end-of-life migration.","metaTitle":"VS-3C20ET07T-M3 SiC Schottky Diode, 650 V, 20 A, TO-220-2","metaDescription":"VS-3C20ET07T-M3 silicon carbide Schottky diode, 650 V reverse, 20 A average, zero reverse recovery, 175 °C junction. Active, RoHS3 compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Speed":"No Recovery Time > 500mA (Io)","Package":"Tube","Diode Type":"Silicon Carbide Schottky","Mounting Type":"Through Hole","Package / Case":"TO-220-2","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"845pF @ 1V, 1MHz","Supplier Device Package":"TO-220AC","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"100 µA @ 650 V","Voltage - DC Reverse (Vr) (Max)":"650 V","Current - Average Rectified (Io)":"20A","Operating Temperature - Junction":"-55°C ~ 175°C","Voltage - Forward (Vf) (Max) @ If":"1.5 V @ 20 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$9.5","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$9.50000","currency":"USD"},{"qty":10,"price":"$8.58500","currency":"USD"},{"qty":100,"price":"$7.10760","currency":"USD"},{"qty":500,"price":"$6.21556","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/613e164170eb1ad0f99c3f239669c8e5.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can VS-3C20ET07T-M3 replace C3D10065?","answer":"The VS-3C20ET07T-M3 is a 650 V, 20 A SiC Schottky in TO-220-2. The C3D10065 is a 650 V, 10 A part in the same package, so the VS-3C20ET07T-M3 has twice the current rating. Electrically it is a drop-in replacement if the circuit can use the extra headroom, but verify the gate-drive loop and snubber — a higher-current SiC die has higher junction capacitance (845 pF at 1 V), which may shift the switching edge rates."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/vishay/VS-3C20ET07T-M3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/vishay/VS-3C20ET07T-M3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}