{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"UCC27714D","brand":"Texas Instruments","brandSlug":"texas-instruments","productSlug":"UCC27714D","canonicalUrl":"https://icboms.com/texas-instruments/UCC27714D","factsUrl":"https://icboms.com/api/mcp/products/UCC27714D","rawCanonicalId":null},"summary":{"shortDescription":"Texas Instruments UCC27714D, half-bridge gate driver, 4A peak output, 600V bootstrap, 15ns rise/fall, 14-SOIC, -40°C to 125°C.","salesMarkdown":"## 4 A peak output, 600 V bootstrap — what it buys the half-bridge design The UCC27714D is a half-bridge gate driver from Texas Instruments rated for 4 A peak source and sink current, with a bootstrap supply that handles up to 600 V on the high-side rail. It drives both IGBTs and N-channel MOSFETs, and the 15 ns typical rise and fall times keep switching losses in check for motor-drive and power-supply stages running into the hundreds of kilohertz. ## 15 ns edges and independent channels — layout and dead-time decisions The 15 ns rise and fall times are symmetrical, which simplifies dead-time calculation — the driver itself adds negligible skew between the high-side and low-side paths. The two channels operate independently (non-inverting inputs), so the PWM timing is entirely in the controller's hands. Supply range is 10 V to 18 V, covering the typical gate drive voltages for standard MOSFETs and IGBTs. The 14-SOIC package (3.90 mm width) is a common footprint; the 0.154-inch body fits standard SOIC-14 land patterns. TI lists the UCC27714D as Active (current product status).","metaTitle":"UCC27714D Gate Driver, 4A Peak, 600V Bootstrap, 14-SOIC","metaDescription":"TI UCC27714D half-bridge gate driver for IGBT/N-channel MOSFET. 4A peak source/sink, 600V bootstrap, 15ns rise/fall. Active production, 14-SOIC.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Power Management (PMIC / Gate Driver)"],"specifications":{"Mfr":"Texas Instruments","Series":"-","Package":"Tube","Gate Type":"IGBT, N-Channel MOSFET","Input Type":"Non-Inverting","Channel Type":"Independent","Mounting Type":"Surface Mount","Package / Case":"14-SOIC (0.154\\\", 3.90mm Width)","Product Status":"Active","lifecycle_stage":"eol_hot","Voltage - Supply":"10V ~ 18V","Number of Drivers":"2","Base Product Number":"UCC27714","Driven Configuration":"Half-Bridge","Operating Temperature":"-40°C~125°C(TJ)","Rise / Fall Time (Typ)":"15ns, 15ns","Supplier Device Package":"14-SOIC","Logic Voltage - VIL, VIH":"1.2V, 2.7V","High Side Voltage - Max (Bootstrap)":"600 V","Current - Peak Output (Source, Sink)":"4A, 4A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.1200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/b2c8862044f354dc07d9af5b99b70b2d.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/UCC27714D/alternatives.json"},"ai":{"faq":[{"question":"Is UCC27714D suitable for driving IGBTs?","answer":"Yes. The gate type is specified for both IGBT and N-channel MOSFET, and the 4 A peak output and 15 ns edges provide enough drive strength for medium-power IGBT modules in motor drives and inverters."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/texas-instruments/UCC27714D","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/texas-instruments/UCC27714D when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T18:03:28.771Z","lastPublished":"2026-07-22T18:03:28.771Z","indexable":true}}