{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"UCC27712QDRQ1","brand":"Texas Instruments","brandSlug":"texas-instruments","productSlug":"UCC27712QDRQ1","canonicalUrl":"https://icboms.com/texas-instruments/UCC27712QDRQ1","factsUrl":"https://icboms.com/api/mcp/products/UCC27712QDRQ1","rawCanonicalId":null},"summary":{"shortDescription":"Texas Instruments UCC27712QDRQ1, Automotive AEC-Q100 half-bridge gate driver, 600V bootstrap, 1.8A source / 2.8A sink peak, 10V~20V supply, -40°C~125°C, 8-SOIC package.","salesMarkdown":"## Half-bridge gate driver for automotive power stages The Texas Instruments UCC27712QDRQ1 is an automotive-grade half-bridge gate driver qualified to AEC-Q100, designed to drive both N-channel MOSFETs and IGBTs in independent-channel configurations. It integrates a bootstrap diode rated for 600 V high-side voltage, making it suitable for motor drives, DC-DC converters, and inverter stages in under-hood and chassis-domain automotive systems. ## 10V to 20V supply — matches standard automotive rails The supply voltage range spans 10 V to 20 V, covering the nominal 12 V battery bus and the boosted 15 V to 18 V rails often used for IGBT gate drive in traction inverters. The 1.8 A source and 2.8 A sink peak output current deliver the gate charge needed for fast switching transitions without excessive drive losses. Rise and fall times are 16 ns and 10 ns typical, respectively, which keeps cross-conduction dead-time manageable in hard-switched topologies.","metaTitle":"UCC27712QDRQ1 Half-Bridge Gate Driver, 600V, AEC-Q100","metaDescription":"Texas Instruments UCC27712QDRQ1 half-bridge gate driver, AEC-Q100 qualified, drives IGBT/MOSFET, 10V~20V supply, 1.8A/2.8A peak, -40°C~125°C, 8-SOIC.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Power Management (PMIC / Gate Driver)"],"specifications":{"Mfr":"Texas Instruments","Series":"Automotive, AEC-Q100","Package":"Tape & Reel (TR); Cut Tape (CT)","Gate Type":"IGBT, N-Channel, P-Channel MOSFET","Input Type":"-","Channel Type":"Independent","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","Product Status":"Active","lifecycle_stage":"eol_hot","Voltage - Supply":"10V ~ 20V","Number of Drivers":"2","Base Product Number":"UCC27712","Driven Configuration":"Half-Bridge","Operating Temperature":"-40°C~125°C(TJ)","Rise / Fall Time (Typ)":"16ns, 10ns","Supplier Device Package":"8-SOIC","Logic Voltage - VIL, VIH":"1.5V, 1.6V","High Side Voltage - Max (Bootstrap)":"600 V","Current - Peak Output (Source, Sink)":"1.8A, 2.8A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.0300","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/54b8dda5951a99180d7ee191064dd03b.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/UCC27712QDRQ1/alternatives.json"},"ai":{"faq":[{"question":"Is UCC27712QDRQ1 automotive qualified?","answer":"Yes, it is AEC-Q100 qualified, making it suitable for automotive applications including under-hood and chassis-domain electronics."},{"question":"Can UCC27712QDRQ1 drive both MOSFETs and IGBTs?","answer":"Yes, it drives N-channel MOSFETs and IGBTs in a half-bridge configuration, with independent channels for high-side and low-side control."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/texas-instruments/UCC27712QDRQ1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/texas-instruments/UCC27712QDRQ1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T18:03:28.771Z","lastPublished":"2026-07-22T18:03:28.771Z","indexable":true}}