{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"UCC27614DR","brand":"Texas Instruments","brandSlug":"texas-instruments","productSlug":"UCC27614DR","canonicalUrl":"https://icboms.com/texas-instruments/UCC27614DR","factsUrl":"https://icboms.com/api/mcp/products/UCC27614DR","rawCanonicalId":null},"summary":{"shortDescription":"Texas Instruments UCC27614DR single low-side gate driver, 10A peak source/sink, 4.5V–26V supply, 4.5ns rise / 4ns fall, -40°C–150°C junction, 8-SOIC package.","salesMarkdown":"## Single-channel 10A low-side driver for N-channel MOSFETs The driver accepts both inverting and non-inverting input signals. ## 4.5 ns rise time — switching loss and ringing tradeoff The fast edges excite parasitic inductance in the gate loop — the PCB layout engineer needs a tight, low-inductance path between the driver output and the MOSFET gate. ## Active lifecycle — no imminent LTB For the storeroom, this means the part is a safe line item to stock — no need to squirrel away a last-time-buy quantity.","metaTitle":"UCC27614DR Low-Side Gate Driver, 10A Peak, 8-SOIC","metaDescription":"Texas Instruments UCC27614DR single low-side gate driver for N-channel MOSFETs. 10A peak source/sink, 4.5V–26V supply, 4.5ns rise time.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Power Management (PMIC / Gate Driver)"],"specifications":{"Mfr":"Texas Instruments","Series":"-","Package":"Tape & Reel (TR); Cut Tape (CT)","Gate Type":"N-Channel MOSFET","Input Type":"Inverting, Non-Inverting","Channel Type":"Single","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","Product Status":"Active","lifecycle_stage":"eol_hot","Voltage - Supply":"4.5V ~ 26V","Number of Drivers":"1","Driven Configuration":"Low-Side","Operating Temperature":"-40°C~150°C(TJ)","Rise / Fall Time (Typ)":"4.5ns, 4ns","Supplier Device Package":"8-SOIC","Logic Voltage - VIL, VIH":"-","Current - Peak Output (Source, Sink)":"10A, 10A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.5300","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/22abddeb5c2986d3efd5b6c6b3f4f6cd.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/UCC27614DR/alternatives.json"},"ai":{"faq":[{"question":"Can UCC27614DR drive IGBTs?","answer":"The UCC27614DR is specified for N-channel MOSFETs with a low-side driven configuration. It can drive IGBTs that present a similar gate charge profile, provided the supply voltage (4.5 V to 26 V) and peak current (10 A) meet the IGBT gate drive requirements. The fast 4.5 ns rise time may need a series gate resistor to limit di/dt and prevent overshoot on the IGBT gate."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/texas-instruments/UCC27614DR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/texas-instruments/UCC27614DR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T18:03:28.771Z","lastPublished":"2026-07-22T18:03:28.771Z","indexable":true}}