{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"UCC27282DRCT","brand":"Texas Instruments","brandSlug":"texas-instruments","productSlug":"UCC27282DRCT","canonicalUrl":"https://icboms.com/texas-instruments/UCC27282DRCT","factsUrl":"https://icboms.com/api/mcp/products/UCC27282DRCT","rawCanonicalId":null},"summary":{"shortDescription":"Texas Instruments UCC27282DRCT, half-bridge gate driver, N-channel MOSFET, 5.5V~16V supply, 2.5A source/3.5A sink peak output, 12ns rise/10ns fall, 120V bootstrap max, -40°C~125°C, 10-VSON (3x3) package, Surface Mount.","salesMarkdown":"## 2.5 A / 3.5 A peak output — what it buys the half-bridge Its 2.5 A source and 3.5 A sink peak output current charge and discharge the gate capacitance quickly, which directly reduces switching losses and keeps the dead-time window tight in a motor-drive or DC-DC converter leg. ## 12 ns rise, 10 ns fall — edge-rate and layout budget The 10-VSON package with exposed pad helps by providing a low-inductance return path through the thermal pad — a four-layer board with the pad stitched to a solid ground plane is the standard layout for this driver. ## 120 V bootstrap — application ceiling The high-side bootstrap pin is rated to 120 V, which sets the maximum DC bus voltage for the half-bridge. This covers 48 V telecom bricks, 72 V e-bike controllers, and 100 V industrial inverter rails with margin. The supply range of 5.5 V to 16 V lets the driver run from a standard 12 V bias rail while the bootstrap diode handles the high-side floating supply.","metaTitle":"UCC27282DRCT 120V Half-Bridge MOSFET Driver, 2.5A/3.5A Peak","metaDescription":"Texas Instruments UCC27282DRCT half-bridge gate driver for N-channel MOSFETs. 120V bootstrap, 2.5A source/3.5A sink peak, 12ns rise/10ns fall.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Power Management (PMIC / Gate Driver)"],"specifications":{"Mfr":"Texas Instruments","Series":"-","Package":"Tape & Reel (TR); Cut Tape (CT)","Gate Type":"N-Channel MOSFET","Input Type":"Non-Inverting","Channel Type":"Independent","Mounting Type":"Surface Mount","Package / Case":"10-VFDFN Exposed Pad","Product Status":"Active","lifecycle_stage":"eol_hot","Voltage - Supply":"5.5V ~ 16V","Number of Drivers":"2","Base Product Number":"UCC27282","Driven Configuration":"Half-Bridge","Operating Temperature":"-40°C~125°C","Rise / Fall Time (Typ)":"12ns, 10ns","Supplier Device Package":"10-VSON (3x3)","Logic Voltage - VIL, VIH":"0.9V, 2.4V","High Side Voltage - Max (Bootstrap)":"120 V","Current - Peak Output (Source, Sink)":"2.5A, 3.5A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.6100","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/ee057bcb151215214ca8dd12e4b9b270.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/UCC27282DRCT/alternatives.json"},"ai":{"faq":[{"question":"Can UCC27282DRCT drive N-channel MOSFETs only?","answer":"Yes, the gate type is specified for N-channel MOSFETs. The half-bridge configuration drives a high-side and a low-side N-channel FET, with the high-side supply derived from a bootstrap circuit."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/texas-instruments/UCC27282DRCT","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/texas-instruments/UCC27282DRCT when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T18:03:28.771Z","lastPublished":"2026-07-22T18:03:28.771Z","indexable":true}}