{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"UCC27200DR","brand":"Texas Instruments","brandSlug":"texas-instruments","productSlug":"UCC27200DR","canonicalUrl":"https://icboms.com/texas-instruments/UCC27200DR","factsUrl":"https://icboms.com/api/mcp/products/UCC27200DR","rawCanonicalId":null},"summary":{"shortDescription":"Texas Instruments UCC27200DR, Half-Bridge Gate Driver, N-Channel MOSFET, 2 Drivers, 3A Peak Output, 8V~17V Supply, 120V Bootstrap, 8ns/7ns Rise/Fall, -40°C~140°C, 8-SOIC.","salesMarkdown":"## 3 A peak drive — what it means for your switching stage Each channel delivers 3 A peak source and 3 A peak sink. ## 120 V bootstrap — what it limits The bootstrap high-side voltage is rated to 120 V maximum. The supply range is 8 V to 17 V. Rated for junction temperatures from -40°C to 140°C. ## Logic compatibility Input logic thresholds are 3 V for VIL and 8 V for VIH. Housed in an 8-SOIC (3.90 mm width) package, surface-mount only. The 0.154-inch body is standard for SOIC-8; footprint matches most existing half-bridge driver layouts. The base number UCC27200 covers a family of half-bridge drivers; the DR suffix is the 8-SOIC reel variant.","metaTitle":"UCC27200DR Half-Bridge Gate Driver, 3A Peak, 120V Bootstrap","metaDescription":"UCC27200DR from TI: half-bridge N-channel MOSFET driver, 3A peak source/sink, 120V bootstrap max, 8ns/7ns rise/fall, -40 to 140°C. Active, ROHS3.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Power Management (PMIC / Gate Driver)"],"specifications":{"Mfr":"Texas Instruments","Series":"-","Package":"Tape & Reel (TR); Cut Tape (CT)","Gate Type":"N-Channel MOSFET","Input Type":"Non-Inverting","Channel Type":"Independent","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","Product Status":"Active","lifecycle_stage":"eol_hot","Voltage - Supply":"8V ~ 17V","Number of Drivers":"2","Base Product Number":"UCC27200","Driven Configuration":"Half-Bridge","Operating Temperature":"-40°C~140°C(TJ)","Rise / Fall Time (Typ)":"8ns, 7ns","Supplier Device Package":"8-SOIC","Logic Voltage - VIL, VIH":"3V, 8V","High Side Voltage - Max (Bootstrap)":"120 V","Current - Peak Output (Source, Sink)":"3A, 3A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.0600","priceTiers":[{"qty":1,"price":"$3.06000","currency":"USD"},{"qty":10,"price":"$2.75300","currency":"USD"},{"qty":25,"price":"$2.59680","currency":"USD"},{"qty":100,"price":"$2.21260","currency":"USD"},{"qty":250,"price":"$2.07760","currency":"USD"},{"qty":500,"price":"$1.81790","currency":"USD"},{"qty":1000,"price":"$1.50626","currency":"USD"},{"qty":2500,"price":"$1.47000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/24ae9c137f7b7307eac459344ef51987.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/UCC27200DR/alternatives.json"},"ai":{"faq":[{"question":"What is the difference between UCC27200DR and UCC27201DR?","answer":"The key difference is input logic thresholds. UCC27200DR requires a 3 V VIL and 8 V VIH, meaning it needs a 5 V logic source to guarantee a valid high. The UCC27201DR has lower thresholds (typically 1.2 V / 4.5 V) and works directly with 3.3 V logic. Both share the same 3 A peak drive, 120 V bootstrap, and 8-SOIC package."},{"question":"What are the direct replacements or equivalents for UCC27200DR?","answer":"The closest functional equivalent is the LM5106MM/NOPB from TI — also a half-bridge N-channel MOSFET driver in a similar package, but with 1.2 A peak output (vs 3 A) and a 125°C temperature limit (vs 140°C). For a pin-compatible drop-in with the same 3 A drive, stick with the UCC27200 family; the LM5106 is a lower-current alternative if your gate charge is small."},{"question":"Does UCC27200DR have a datasheet with pinout and timing?","answer":"Yes, a full datasheet is available from Texas Instruments covering pin assignments, timing diagrams, application circuits, and thermal data. The key timing specs are 8 ns rise and 7 ns fall times (typical) with 3 A peak drive."},{"question":"What is UCC27200DR's listed gate type?","answer":"It is designed to drive N-channel MOSFETs in a half-bridge configuration. The two channels are independent and non-inverting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/texas-instruments/UCC27200DR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/texas-instruments/UCC27200DR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}