{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"UCC21739QDWQ1","brand":"Texas Instruments","brandSlug":"texas-instruments","productSlug":"UCC21739QDWQ1","canonicalUrl":"https://icboms.com/texas-instruments/UCC21739QDWQ1","factsUrl":"https://icboms.com/api/mcp/products/UCC21739QDWQ1","rawCanonicalId":null},"summary":{"shortDescription":"Texas Instruments UCC21739QDWQ1, automotive isolated single-channel gate driver, capacitive coupling, 3000Vrms isolation, 10A peak output, 33ns/27ns rise/fall, 150V/ns CMTI, 16-SOIC package, AEC-Q100 qualified.","salesMarkdown":"## Automotive isolated gate driver for SiC and IGBT modules It uses capacitive coupling technology to deliver 3000Vrms galvanic isolation between the input and output stages, meeting the reinforced insulation requirements of automotive systems. With a 10A peak source and sink current capability, the UCC21739QDWQ1 can drive large IGBT modules and SiC MOSFETs with high gate capacitance, achieving fast switching transitions. The 150V/ns minimum common-mode transient immunity (CMTI) ensures reliable operation in the presence of fast voltage transients common in motor-drive and inverter applications. ## Package and supply considerations for the 16-SOIC footprint The UCC21739QDWQ1 is supplied in a 16-SOIC wide-body package (0.295\", 7.50mm width) with surface-mount termination. The 16-SOIC footprint provides adequate creepage distance for 3000Vrms isolation in a compact layout. The output supply range of 13V to 33V accommodates both standard IGBT gate drive voltages (typically 15V) and higher SiC MOSFET gate drive levels (18V to 20V), with margin for negative gate bias if needed. The single-channel configuration simplifies layout for phase-leg topologies where each switch requires its own isolated driver. ## Active lifecycle and AEC-Q100 qualification The AEC-Q100 qualification covers the full automotive stress test suite, including pre- and post-reflow moisture sensitivity, temperature cycling, and high-temperature operating life. The device is also approved by CQC, CSA, TUV, UL, and VDE for safety isolation, which simplifies system-level certification for traction inverters and on-board chargers.","metaTitle":"UCC21739QDWQ1 automotive isolated gate driver, 10A peak","metaDescription":"TI UCC21739QDWQ1 automotive isolated gate driver with 10A peak output, 3000Vrms isolation, AEC-Q100 qualified. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Digital Isolators"],"specifications":{"Grade":"Automotive","Package":"Tube","Technology":"Capacitive Coupling","Mounting Type":"Surface Mount","Qualification":"AEC-Q100","Package / Case":"16-SOIC (0.295\\\", 7.50mm Width)","Approval Agency":"CQC, CSA, TUV, UL, VDE","lifecycle_stage":"eol_hot","Number of Channels":"1","Voltage - Isolation":"3000Vrms","Current - Peak Output":"10A","Operating Temperature":"-40°C ~ 125°C","Rise / Fall Time (Typ)":"33ns, 27ns","Supplier Device Package":"16-SOIC","Voltage - Output Supply":"13V ~ 33V","Current - Output High, Low":"10A, 10A","Pulse Width Distortion (Max)":"30ns","Propagation Delay tpLH / tpHL (Max)":"130ns, 130ns","Common Mode Transient Immunity (Min)":"150V/ns"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.87","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$6.87000","currency":"USD"},{"qty":10,"price":"$6.20400","currency":"USD"},{"qty":25,"price":"$5.91560","currency":"USD"},{"qty":100,"price":"$5.13630","currency":"USD"},{"qty":250,"price":"$4.90548","currency":"USD"},{"qty":500,"price":"$4.47264","currency":"USD"},{"qty":1000,"price":"$3.89552","currency":"USD"},{"qty":2500,"price":"$3.75124","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/c196f59e2e0c32d6ef2afedbcaa6f2b1.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is UCC21739QDWQ1 suitable for driving SiC MOSFETs?","answer":"Yes. The 10A peak output current and 33ns/27ns rise/fall times provide the gate drive strength needed for SiC MOSFETs with high gate charge. The 150V/ns CMTI ensures stable operation during the fast switching transients characteristic of SiC devices. The output supply range of 13V to 33V covers the typical SiC gate drive voltage of 18V to 20V, with headroom for negative bias if required."},{"question":"What are the differences between UCC21739QDWQ1 and UCC21732QDWQ1?","answer":"Both parts are single-channel isolated gate drivers in the same 16-SOIC package with 3000Vrms isolation and AEC-Q100 qualification. The UCC21739QDWQ1 is specified for 10A peak output current, while the UCC21732QDWQ1 is a lower-current variant. The UCC21739QDWQ1 also offers 150V/ns CMTI, which is higher than the UCC21732QDWQ1's rating. For designs requiring maximum drive strength and noise immunity, the UCC21739QDWQ1 is the appropriate choice."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/texas-instruments/UCC21739QDWQ1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/texas-instruments/UCC21739QDWQ1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}