{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"UCC21520ADW","brand":"Texas Instruments","brandSlug":"texas-instruments","productSlug":"UCC21520ADW","canonicalUrl":"https://icboms.com/texas-instruments/UCC21520ADW","factsUrl":"https://icboms.com/api/mcp/products/UCC21520ADW","rawCanonicalId":null},"summary":{"shortDescription":"Texas Instruments UCC21520ADW dual-channel isolated gate driver, capacitive coupling, 5700Vrms isolation, 4A source / 6A sink output, 30ns propagation delay, 16-SOIC package, -40°C to 125°C operating temperature.","salesMarkdown":"## 5.7 kVrms isolation, 4A/6A drive — what this gate driver is built for The UCC21520ADW: It is designed to drive IGBTs, SiC MOSFETs, and GaN FETs in half-bridge, full-bridge, and multi-level converter topologies where the high-side switch floats on a fast-switching node. The 4A source and 6A sink output current charges the gate capacitance quickly enough for switching frequencies in the hundreds of kilohertz, while the matched 30ns maximum propagation delay on both channels simplifies dead-time management and reduces shoot-through risk in hard-switched bridges. The 100V/ns minimum common-mode transient immunity keeps the output state latched through the dv/dt of a SiC or GaN half-bridge switching event, which is the difference between a clean transition and a latch-up fault. ## 30 ns propagation delay — matched channels for balanced switching Both channels share a 30ns maximum propagation delay, with pulse-width distortion max of 6ns. ## 16-SOIC footprint and supply range — layout and rail planning The 16-SOIC (0.295\", 7.50mm width) body with surface-mount termination is a common footprint shared by many TI isolated drivers, so a board layout for this part can often accommodate a pin-compatible alternate without a respin. The output supply range of 6.5V to 25V covers the typical gate-drive voltages for IGBTs (15V) and SiC MOSFETs (18V to 20V), and the 6.5V minimum is low enough to drive logic-level MOSFETs if the application needs it. ## Approvals and compliance — CQC, CSA, UR, VDE The UCC21520ADW carries approvals from CQC, CSA, UR, and VDE.","metaTitle":"TI UCC21520ADW Isolated Gate Driver, 5.7 kVrms, 4A/6A","metaDescription":"Texas Instruments UCC21520ADW dual-channel isolated gate driver with 5700Vrms isolation, 4A/6A output, 30ns propagation delay. Active lifecycle, -40°C to 125°C.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Digital Isolators"],"specifications":{"Package":"Tube","Technology":"Capacitive Coupling","Mounting Type":"Surface Mount","Package / Case":"16-SOIC (0.295\\\", 7.50mm Width)","Approval Agency":"CQC, CSA, UR, VDE","lifecycle_stage":"eol_hot","Number of Channels":"2","Voltage - Isolation":"5700Vrms","Operating Temperature":"-40°C ~ 125°C","Rise / Fall Time (Typ)":"6ns, 7ns","Supplier Device Package":"16-SOIC","Voltage - Output Supply":"6.5V ~ 25V","Current - Output High, Low":"4A, 6A","Pulse Width Distortion (Max)":"6ns","Propagation Delay tpLH / tpHL (Max)":"30ns, 30ns","Common Mode Transient Immunity (Min)":"100V/ns"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.33","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$6.33000","currency":"USD"},{"qty":10,"price":"$5.68300","currency":"USD"},{"qty":25,"price":"$5.37200","currency":"USD"},{"qty":100,"price":"$4.65590","currency":"USD"},{"qty":250,"price":"$4.41712","currency":"USD"},{"qty":500,"price":"$3.96348","currency":"USD"},{"qty":1000,"price":"$3.34270","currency":"USD"},{"qty":2500,"price":"$3.17556","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/a04b6cb7b9448f146a13174c526a41e2.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can UCC21520ADW drive SiC MOSFETs or GaN FETs?","answer":"Yes. The 4A source / 6A sink output is sufficient to drive the gate charge of most 600V to 1200V SiC MOSFETs and GaN HEMTs at switching frequencies up to several hundred kilohertz. The 100V/ns minimum CMTI ensures the output stays latched through the fast dv/dt of a SiC or GaN half-bridge switching node. The 6.5V to 25V output supply range covers the typical 18V to 20V gate-drive voltage for SiC FETs."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/texas-instruments/UCC21520ADW","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/texas-instruments/UCC21520ADW when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}