{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"TTC004B,Q","brand":"Toshiba Semiconductor","brandSlug":"toshiba","productSlug":"TTC004BQ","canonicalUrl":"https://icboms.com/toshiba/TTC004BQ","factsUrl":"https://icboms.com/api/mcp/products/TTC004B%2CQ","rawCanonicalId":null},"summary":{"shortDescription":"Toshiba Semiconductor TTC004B,Q NPN bipolar junction transistor, 160 V Vce breakdown, 1.5 A Ic max, 10 W Pd, TO-225AA / TO-126-3 through-hole package, Bulk.","salesMarkdown":"The TTC004B,Q is a 160 V, 1.5 A NPN bipolar transistor in a TO-126N through-hole package, rated for 10 W continuous power dissipation at a junction temperature up to 150 °C. Vce saturation is specified at 500 mV max at a forced-beta condition of 50 mA base drive into 500 mA collector current, which gives a reasonable guide for saturated-switch designs at moderate current. The TO-126N (also listed as TO-225AA / TO-126-3) is a three-lead through-hole package with a metal tab for heatsinking — the tab is internally connected to the collector, so the PCB copper or an external heatsink must account for that electrical potential. Mounting is through-hole, so the lead pitch and hole pattern match the standard TO-126 footprint; the Bulk packaging means it ships as individual units, not on tape and reel. ## Lifecycle and compliance The collector cutoff current (ICBO) is specified at 100 nA maximum, which is a standard figure for a silicon transistor of this voltage class and indicates a clean junction.","metaTitle":"Toshiba TTC004B,Q NPN Transistor, 160V 1.5A, TO-126N","metaDescription":"Toshiba TTC004B,Q NPN bipolar transistor, 160 V Vce, 1.5 A Ic, 10 W Pd, TO-126N through-hole package. Active production, RoHS compliant. Quoted to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"RoHS Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Package":"Bulk","Power - Max":"10 W","Mounting Type":"Through Hole","Package / Case":"TO-225AA, TO-126-3","Transistor Type":"NPN","lifecycle_stage":"eol_hot","Operating Temperature":"150°C (TJ)","Frequency - Transition":"100MHz","Supplier Device Package":"TO-126N","Vce Saturation (Max) @ Ib, Ic":"500mV @ 50mA, 500mA","Current - Collector (Ic) (Max)":"1.5 A","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"140 @ 100mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"160 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.52","stockQuantity":23,"priceTiers":[{"qty":1,"price":"$0.54000","currency":"USD"},{"qty":10,"price":"$0.46500","currency":"USD"},{"qty":100,"price":"$0.34730","currency":"USD"},{"qty":500,"price":"$0.27284","currency":"USD"},{"qty":1000,"price":"$0.21083","currency":"USD"},{"qty":2000,"price":"$0.19223","currency":"USD"},{"qty":5000,"price":"$0.17983","currency":"USD"},{"qty":10000,"price":"$0.17550","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/b53b3497c783d9df3b3b41971b472b7c.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the closest functional complement to TTC004B,Q?","answer":"The TTA004B,Q is the PNP complement — same 10 W power rating, same 100 MHz fT, same 160 V Vce and 1.5 A Ic ratings, but PNP polarity. It shares the same TO-126N package and through-hole mounting, so a push-pull or complementary output stage can use the same heatsink layout and PCB footprint for both halves."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/toshiba/TTC004BQ","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/toshiba/TTC004BQ when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}