{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"TPS1120DR","brand":"Texas Instruments","brandSlug":"texas-instruments","productSlug":"TPS1120DR","canonicalUrl":"https://icboms.com/texas-instruments/TPS1120DR","factsUrl":"https://icboms.com/api/mcp/products/TPS1120DR","rawCanonicalId":null},"summary":{"shortDescription":"Texas Instruments TPS1120DR, dual P-channel MOSFET, 15V Vdss, 1.17A continuous drain current, 180mOhm Rds(on) at 1.5A/10V, logic-level gate, 8-SOIC surface-mount package, -40°C to 150°C junction temperature.","salesMarkdown":"## Thermal headroom and operating range Junction temperature range is -40°C to 150°C. Total package dissipation is 840mW. ## Lifecycle and compliance ROHS3 compliant. No second-source or direct replacement is listed in the available documentation, so for dual-sourcing requirements, qualification of an alternate part would need to be done independently.","metaTitle":"TPS1120DR Dual P-Channel MOSFET, 15V, 1.17A, 180mOhm, SOIC-8","metaDescription":"Texas Instruments TPS1120DR dual P-channel MOSFET, 15V Vdss, 1.17A Id, 180mOhm Rds(on), logic-level gate, -40 to 150°C, ROHS3, SOIC-8. Available to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"2 P-Channel (Dual)","FET Feature":"Logic Level Gate","Power - Max":"840mW","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1.5V @ 250µA","Operating Temperature":"-40°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"180mOhm @ 1.5A, 10V","Supplier Device Package":"8-SOIC","Gate Charge (Qg) (Max) @ Vgs":"5.45nC @ 10V","Drain to Source Voltage (Vdss)":"15V","Current - Continuous Drain (Id) @ 25°C":"1.17A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.1","priceTiers":[{"qty":1,"price":"$2.10000","currency":"USD"},{"qty":10,"price":"$1.88900","currency":"USD"},{"qty":100,"price":"$1.51860","currency":"USD"},{"qty":500,"price":"$1.24766","currency":"USD"},{"qty":1000,"price":"$1.03378","currency":"USD"},{"qty":2500,"price":"$0.95965","currency":"USD"},{"qty":5000,"price":"$0.92410","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/79b473fcf712044a4616c1bf9925c620.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/TPS1120DR/alternatives.json"},"ai":{"faq":[{"question":"Is TPS1120DR RoHS compliant?","answer":"Yes, TPS1120DR is ROHS3 compliant."},{"question":"Can TPS1120DR replace a single P-channel MOSFET?","answer":"Yes, the TPS1120DR contains two independent P-channel MOSFETs, so one channel can replace a single P-channel device. The unused channel can be left floating or tied off, provided the total package dissipation (840mW) is respected."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/texas-instruments/TPS1120DR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/texas-instruments/TPS1120DR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T18:51:14.863Z","lastPublished":"2026-07-22T18:51:14.863Z","indexable":true}}