{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"TPS1100D","brand":"Texas Instruments","brandSlug":"texas-instruments","productSlug":"TPS1100D","canonicalUrl":"https://icboms.com/texas-instruments/TPS1100D","factsUrl":"https://icboms.com/api/mcp/products/TPS1100D","rawCanonicalId":null},"summary":{"shortDescription":"Texas Instruments TPS1100D, P-Channel MOSFET, 15V Vdss, 1.6A continuous drain, 180mOhm Rds(on), 8-SOIC surface mount, -40°C to 150°C junction.","salesMarkdown":"## P-channel switch for low-side or load-switch duty Gate threshold voltage is 1.5 V max at 250 µA, so logic-level drive from a 2.7 V rail turns it on fully. Gate charge is 5.45 nC at 10 V — light enough for a GPIO pin to switch it without a dedicated driver in many low-frequency load-switch or power-rail sequencing roles. ## Package and storage note If your pick-and-place line expects reels, plan to transfer to carrier tape or hand-place for prototype runs. The 8-SOIC body (0.154\" wide, 3.90 mm) is a standard footprint — no surprises for the board layout. No end-of-life notice on record.","metaTitle":"TPS1100D P-Channel MOSFET, 15V 1.6A, 8-SOIC","metaDescription":"Texas Instruments TPS1100D P-channel MOSFET, 15V Vdss, 1.6A continuous drain, 180mOhm Rds(on), 8-SOIC. Active lifecycle, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Tube","FET Type":"P-Channel","Vgs (Max)":"+2V, -15V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1.5V @ 250µA","Operating Temperature":"-40°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"180mOhm @ 1.5A, 10V","Power Dissipation (Max)":"791mW (Ta)","Supplier Device Package":"8-SOIC","Gate Charge (Qg) (Max) @ Vgs":"5.45 nC @ 10 V","Drain to Source Voltage (Vdss)":"15 V","Drive Voltage (Max Rds On, Min Rds On)":"2.7V, 10V","Current - Continuous Drain (Id) @ 25°C":"1.6A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.79","priceTiers":[{"qty":1,"price":"$1.79000","currency":"USD"},{"qty":10,"price":"$1.60800","currency":"USD"},{"qty":100,"price":"$1.29270","currency":"USD"},{"qty":500,"price":"$1.06208","currency":"USD"},{"qty":1000,"price":"$0.88000","currency":"USD"},{"qty":2000,"price":"$0.81932","currency":"USD"},{"qty":5000,"price":"$0.78897","currency":"USD"},{"qty":10000,"price":"$0.76874","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/34f0251d9a3fe8006788105a44b0254c.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/TPS1100D/alternatives.json"},"ai":{"faq":[{"question":"What is the TPS1100D equivalent P-channel MOSFET?","answer":"No official cross-reference or second-source alternate is listed for the TPS1100D in the available records. For a pin-compatible alternative, compare the 8-SOIC footprint, 15 V Vdss, 1.6 A Id, and 180 mOhm Rds(on) against other P-channel parts in the same package — but no direct equivalent is confirmed here."},{"question":"What is TPS1100D's listed FET type?","answer":"The TPS1100D is a P-Channel MOSFET, using standard silicon gate (Metal Oxide) technology."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/texas-instruments/TPS1100D","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/texas-instruments/TPS1100D when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T18:51:14.863Z","lastPublished":"2026-07-22T18:51:14.863Z","indexable":true}}