{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"TK2R4A08QM,S4X","brand":"Toshiba Semiconductor","brandSlug":"toshiba","productSlug":"TK2R4A08QM~6S4X","canonicalUrl":"https://icboms.com/toshiba/TK2R4A08QM~6S4X","factsUrl":"https://icboms.com/api/mcp/products/TK2R4A08QM%2CS4X","rawCanonicalId":null},"summary":{"shortDescription":"Toshiba Semiconductor U-MOSX-H series N-Channel MOSFET, TK2R4A08QM,S4X, 80 Vdss, 100 A Id, 2.44 mOhm Rds(on), TO-220SIS through-hole package.","salesMarkdown":"## Gate charge and switching speed — what the numbers mean for the driver The TK2R4A08QM,S4X: Total gate charge is 179 nC at 10 V — this sets the drive current required for a given switching frequency. A gate driver sourcing 1 A charges the gate in roughly 180 ns, but the 13000 pF input capacitance at 40 V drain bias means the Miller plateau dominates the switching transition; the actual turn-on time depends on the driver's peak current and the gate-loop inductance. The recommended drive voltage range is 6 V to 10 V for achieving the rated Rds(on). At 6 V the on-resistance is higher than the 2.44 mOhm figure, so a 10 V rail is preferred for minimum conduction loss. The ±20 V Vgs max gives headroom for gate ringing in a hard-switched topology, but the absolute limit is tight — a snubber or gate resistor is advisable if the layout has more than 10 nH of common-source inductance. ## Package and board integration — TO-220SIS through-hole The TO-220SIS (supplier device package) is a fully isolated through-hole package — the metal tab is electrically isolated from the die, so no mica washer or sil-pad is needed between the device and the heatsink. This saves assembly time and reduces thermal resistance compared to a standard TO-220 with an insulator. The three leads are standard 0.025-inch thick, fitting a 1.6 mm PCB hole. Mounting torque on the screw should follow the package specification — typically 0.6 to 0.8 N·m for the TO-220SIS flange. Over-torquing cracks the epoxy body; under-torquing leaves an air gap that raises the junction-to-case thermal resistance above the 2.66 °C/W implied by the 47 W dissipation rating.","metaTitle":"Toshiba TK2R4A08QM,S4X N-Channel MOSFET, 80V, 100A","metaDescription":"Active Toshiba TK2R4A08QM,S4X N-Channel MOSFET, 80V Vdss, 100A Id, 2.44mOhm Rds(on). TO-220SIS through-hole package. ROHS3 compliant. Quoted to order.","metaKeywords":null},"attributes":{"series":"U-MOSX-H","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Series":"U-MOSX-H","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 2.2mA","Operating Temperature":"175°C","Rds On (Max) @ Id, Vgs":"2.44mOhm @ 50A, 10V","Power Dissipation (Max)":"47W (Tc)","Supplier Device Package":"TO-220SIS","Gate Charge (Qg) (Max) @ Vgs":"179 nC @ 10 V","Drain to Source Voltage (Vdss)":"80 V","Input Capacitance (Ciss) (Max) @ Vds":"13000 pF @ 40 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"100A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.87","priceTiers":[{"qty":1,"price":"$2.87000","currency":"USD"},{"qty":10,"price":"$2.57400","currency":"USD"},{"qty":100,"price":"$2.10890","currency":"USD"},{"qty":500,"price":"$1.79528","currency":"USD"},{"qty":1000,"price":"$1.51410","currency":"USD"},{"qty":2000,"price":"$1.43840","currency":"USD"},{"qty":5000,"price":"$1.38432","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/599a935ae9bf5e8faf084658d9c3787a.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/TK2R4A08QM%2CS4X/alternatives.json"},"ai":{"faq":[{"question":"What is the closest functional alternative to TK2R4A08QM,S4X?","answer":"The TK3R3E08QM,S1X is a peer in the same U-MOSX-H series with a higher Rds(on) of 3.3 mOhm and lower gate charge of 110 nC, but a higher continuous drain current of 120 A. It shares the same TO-220SIS package and pinout — no board layout change is needed to swap between the two, though the gate drive tuning may differ due to the lower Qg."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/toshiba/TK2R4A08QM~6S4X","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/toshiba/TK2R4A08QM~6S4X when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}