{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STWA48N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STWA48N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STWA48N60M2","factsUrl":"https://icboms.com/api/mcp/products/STWA48N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh N-Channel MOSFET, STWA48N60M2, 600V Vdss, 42A Id, 70mOhm Rds(on) at 10V, 70nC Qg, TO-247-3 through-hole, -55°C to 150°C junction temperature.","salesMarkdown":"## Gate charge and switching frequency — sizing the driver The STWA48N60M2: Total gate charge is 70 nC at 10 V. The 3060 pF input capacitance at 100 V drain bias is the capacitive load the driver sees during turn-on. ## Through-hole TO-247 — thermal and mechanical fit The TO-247-3 through-hole package with long leads (supplier device package: TO-247 Long Leads) is a standard power package for heatsink mounting. The 300 W power dissipation at case temperature is the absolute maximum; real-world dissipation is limited by the heatsink thermal resistance and the 150°C maximum junction temperature. The long-lead variant provides extra stand-off height for better clearance under the package or for mounting on a thick heatsink. It is ROHS3 compliant.","metaTitle":"STWA48N60M2 N-Channel MOSFET, 600V, 42A, TO-247","metaDescription":"STMicroelectronics STWA48N60M2 MDmesh N-channel MOSFET: 600V Vdss, 42A Id, 70mOhm Rds(on) at 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"70mOhm @ 21A, 10V","Power Dissipation (Max)":"300W (Tc)","Supplier Device Package":"TO-247 Long Leads","Gate Charge (Qg) (Max) @ Vgs":"70 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"3060 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"42A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$8.36","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$8.36000","currency":"USD"},{"qty":10,"price":"$7.16200","currency":"USD"},{"qty":100,"price":"$5.96790","currency":"USD"},{"qty":500,"price":"$5.26584","currency":"USD"},{"qty":1000,"price":"$4.73925","currency":"USD"},{"qty":2000,"price":"$4.44086","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/1532249593ad73440f860f7a9fe60527.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of STWA48N60M2 at 10V?","answer":"The maximum on-resistance is 70 mOhm at 10 V gate drive with 21 A drain current."},{"question":"What is the difference between STWA48N60M2 and STB48N60M2?","answer":"The primary difference is the package: STWA48N60M2 is a through-hole TO-247, while STB48N60M2 is a surface-mount D2PAK. The die and electrical ratings are the same family; the package choice depends on the thermal management approach and assembly process."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STWA48N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STWA48N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}