{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STW8N120K5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STW8N120K5","canonicalUrl":"https://icboms.com/stmicroelectronics/STW8N120K5","factsUrl":"https://icboms.com/api/mcp/products/STW8N120K5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ K5 N-channel MOSFET, 1200 V drain-source, 6 A continuous drain, 2 Ohm Rds(on) at 10 V, 13.7 nC gate charge, TO-247-3 through-hole package, -55 to 150 °C junction temperature.","salesMarkdown":"## 1200 V drain-source — the voltage headroom that defines the application The STW8N120K5: The 1200 V drain-source rating suits offline flyback converters, PFC boost stages, and auxiliary power supplies. ## 2 Ohm Rds(on) — conduction loss at the operating point At 6 A continuous drain, the conduction loss at 2 Ohm is within the 130 W power dissipation limit at the case. ## 13.7 nC gate charge — switching speed without a heavy driver Input capacitance Ciss is 505 pF at 100 V drain-source. The 150°C maximum junction allows a higher case temperature in a sealed enclosure, but the 130 W power dissipation limit at the case must be derated above 25 °C per the datasheet curve.","metaTitle":"STW8N120K5 MOSFET N-CH 1200V 6A TO247, MDmesh K5","metaDescription":"STW8N120K5 N-channel 1200 V 6 A MOSFET in TO-247. 2 Ohm Rds(on) at 10 V, 13.7 nC gate charge, -55 to 150 °C. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ K5","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™ K5","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 100µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"2Ohm @ 2.5A, 10V","Power Dissipation (Max)":"130W (Tc)","Supplier Device Package":"TO-247","Gate Charge (Qg) (Max) @ Vgs":"13.7 nC @ 10 V","Drain to Source Voltage (Vdss)":"1200 V","Input Capacitance (Ciss) (Max) @ Vds":"505 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"6A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$7.55","priceTiers":[{"qty":1,"price":"$7.55000","currency":"USD"},{"qty":30,"price":"$6.02567","currency":"USD"},{"qty":120,"price":"$5.39142","currency":"USD"},{"qty":510,"price":"$4.75710","currency":"USD"},{"qty":1020,"price":"$4.28139","currency":"USD"},{"qty":2010,"price":"$4.01182","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/fe40fb2e0b72ff9ff8bc334db43c148f.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STW8N120K5/alternatives.json"},"ai":{"faq":[{"question":"What is the Vgs threshold of the STW8N120K5?","answer":"The maximum gate threshold voltage is 5 V at a drain current of 100 µA. The gate drive voltage for minimum on-resistance is 10 V."},{"question":"Is the STW8N120K5 RoHS compliant?","answer":"Yes, the STW8N120K5 is ROHS3 compliant per ST's lifecycle listing."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STW8N120K5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STW8N120K5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-20T14:34:45.345Z","lastPublished":"2026-07-20T14:34:45.345Z","indexable":true}}