{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STW88N65M5-4","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STW88N65M5-4","canonicalUrl":"https://icboms.com/stmicroelectronics/STW88N65M5-4","factsUrl":"https://icboms.com/api/mcp/products/STW88N65M5-4","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh M5 series, STW88N65M5-4, N-Channel MOSFET, 650 V Vdss, 84 A Id, 29 mOhm Rds(on) at 42 A, 10 V, TO-247-4 package, through-hole mount.","salesMarkdown":"## 650 V N-channel in a 4-lead TO-247 The TO-247-4 package adds a Kelvin source pin that separates the gate-drive return from the high-current power path. This reduces common-source inductance in the gate loop, which translates to cleaner switching waveforms and lower turn-off losses in hard-switched topologies. ## Gate charge and switching budget Total gate charge is 204 nC at 10 V, with an input capacitance of 8825 pF at 100 V drain-source. The gate-driver must supply this charge each switching cycle — at 100 kHz the average gate-drive current is about 20 mA, well within a standard driver's capability, but the peak current during the Miller plateau determines the switching speed. The 450 W maximum power dissipation at case temperature is a package-limited rating; real-world dissipation is set by the junction-to-case thermal impedance and the heatsink's ability to hold the case below 150 °C.","metaTitle":"STW88N65M5-4 MOSFET N-CH 650V 84A TO-247-4, 29 mOhm","metaDescription":"STW88N65M5-4 N-channel 650 V 84 A MOSFET in TO-247-4 with 29 mOhm Rds(on) at 42 A, 10 V. MDmesh M5 series. Active production.","metaKeywords":null},"attributes":{"series":"MDmesh™ M5","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™ M5","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-247-4","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"29mOhm @ 42A, 10V","Power Dissipation (Max)":"450W (Tc)","Supplier Device Package":"TO-247-4","Gate Charge (Qg) (Max) @ Vgs":"204 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"8825 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"84A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$17.1","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$17.10000","currency":"USD"},{"qty":10,"price":"$15.06700","currency":"USD"},{"qty":100,"price":"$13.03090","currency":"USD"},{"qty":500,"price":"$11.80928","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/d5c6e72eccba50228f573b0dd4edd13f.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the difference between STW88N65M5-4 and the 3-lead STW88N65M5?","answer":"The STW88N65M5-4 uses a TO-247-4 package with a Kelvin source connection, while the standard STW88N65M5 uses a 3-lead TO-247. The fourth pin decouples the gate-drive return from the power current path, reducing gate-loop inductance for faster switching and lower losses. Die-level ratings are otherwise the same."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STW88N65M5-4","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STW88N65M5-4 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}