{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STW77N65M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STW77N65M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STW77N65M5","factsUrl":"https://icboms.com/api/mcp/products/STW77N65M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STW77N65M5, MDmesh V N-Channel MOSFET, 650 V Vdss, 69 A Id, 38 mOhm Rds(on) at 10 V, 200 nC Qg, TO-247-3 through-hole package.","salesMarkdown":"## 650 V, 69 A — the conduction-loss floor in a TO-247 The 38 mOhm max Rds(on) at 34.5 A, 10 V sets the conduction-loss floor for the design — at 10 A the I²R loss is 3.8 W, which the TO-247 package sinks to a heatsink through the exposed back tab. The 400 W power dissipation ceiling at Tc=25 °C is a theoretical limit; real-world dissipation is limited by the junction-to-case thermal impedance and the heatsink's ability to hold the case below 150 °C Tj max. ## Gate charge and switching — the driver budget Total gate charge is 200 nC at Vgs=10 V. At a 100 kHz hard-switching frequency the average gate drive current is 20 mA (Qg × fsw), and the peak current from the driver must deliver the gate plateau in under 100 ns to avoid Miller-turn-on. The input capacitance Ciss is 9800 pF at Vds=100 V — this is the Miller plateau charge and the driver's reactive load. A 10 V gate drive voltage is required for the rated Rds(on); driving below 10 V increases on-resistance and shifts the threshold.","metaTitle":"STW77N65M5 N-Channel MOSFET, 650 V, 69 A","metaDescription":"STW77N65M5 MDmesh V N-Channel MOSFET, 650 Vdss, 69 A Id, 38 mOhm Rds(on) at 10 V. TO-247-3. Active, ROHS3.","metaKeywords":null},"attributes":{"series":"MDmesh™ V","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™ V","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"38mOhm @ 34.5A, 10V","Power Dissipation (Max)":"400W (Tc)","Supplier Device Package":"TO-247-3","Gate Charge (Qg) (Max) @ Vgs":"200 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"9800 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"69A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$17.06","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$17.06000","currency":"USD"},{"qty":10,"price":"$15.02600","currency":"USD"},{"qty":100,"price":"$12.99540","currency":"USD"},{"qty":500,"price":"$11.77706","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/61949e95e9ce558f3cabcb128585242d.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of the STW77N65M5?","answer":"Maximum Rds(on) is 38 mOhm at Id=34.5 A and Vgs=10 V. This is the conduction-loss spec for the hot operating point — actual Rds(on) increases with junction temperature above 25 °C."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STW77N65M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STW77N65M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}