{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STW72N60DM2AG","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STW72N60DM2AG","canonicalUrl":"https://icboms.com/stmicroelectronics/STW72N60DM2AG","factsUrl":"https://icboms.com/api/mcp/products/STW72N60DM2AG","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STW72N60DM2AG, Automotive AEC-Q101 MDmesh DM2 N-Channel MOSFET, 600 V Vdss, 66 A Id, 42 mOhm Rds(on) at 10 V, TO-247-3 through-hole package.","salesMarkdown":"## 600 V, 66 A N-channel MOSFET for automotive power trains It is qualified to AEC-Q101, making it suitable for automotive power conversion and motor drive applications where reliability under thermal and electrical stress is required. ## On-resistance and gate charge — conduction and switching losses This Rds(on) figure sets the conduction loss floor at a given current; at 33 A the dissipation is roughly 46 W (I²R), which must be managed within the 446 W maximum power dissipation rating. Total gate charge is 121 nC at 10 V. For a 20 kHz switching frequency, the average gate-drive current required is about 2.4 mA; the driver must supply this without exceeding its peak current capability during the switching transition. Input capacitance Ciss is 5508 pF at 100 V drain-source. This capacitance, together with the gate resistance, sets the switching speed and the Miller plateau duration; a higher Ciss slows the turn-on and turn-off edges, increasing crossover losses if the gate drive is not sized accordingly. ## Temperature range and package — mounting and thermal management Operating junction temperature range is -55 °C to 150 °C, covering automotive under-hood and chassis environments. The TO-247-3 through-hole package provides a large copper tab for heatsinking; the thermal pad area on the PCB or heatsink must be sized to keep the junction below 150 °C at the maximum load current. It is ROHS3 compliant, meeting the latest European restriction-of-hazardous-substances directive.","metaTitle":"STW72N60DM2AG N-Channel MOSFET, 600 V, 66 A, TO-247-3","metaDescription":"STW72N60DM2AG N-channel MOSFET, 600 V Vdss, 66 A continuous drain, 42 mOhm Rds(on) at 10 V. AEC-Q101 qualified, active production.","metaKeywords":null},"attributes":{"series":"Automotive, AEC-Q101, MDmesh™ DM2","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"Automotive, AEC-Q101, MDmesh™ DM2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"42mOhm @ 33A, 10V","Power Dissipation (Max)":"446W (Tc)","Supplier Device Package":"TO-247-3","Gate Charge (Qg) (Max) @ Vgs":"121 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"5508 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"66A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$12.04","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$12.04000","currency":"USD"},{"qty":10,"price":"$11.06400","currency":"USD"},{"qty":100,"price":"$9.46420","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/758833a60c6ac92e2291c79f4b05e24c.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the exact Rds(on) of STW72N60DM2AG at 10V Vgs?","answer":"The maximum on-resistance is 42 mOhm at a drain current of 33 A with a 10 V gate-to-source drive. This is the worst-case figure at 25 °C junction temperature; actual Rds(on) increases with temperature per the normalised curve in the datasheet."},{"question":"Can STW72N60DM2AG replace STW70N60DM2?","answer":"The STW72N60DM2AG is a higher-current variant in the same MDmesh DM2 family, with a 66 A continuous drain rating versus the STW70N60DM2's lower current. Both share the TO-247-3 package and 600 V Vdss, but the gate charge and Rds(on) differ. Verify the gate-drive and thermal budget against the original design before substituting."},{"question":"What is the maximum junction temperature for STW72N60DM2AG?","answer":"The maximum operating junction temperature is 150 °C."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STW72N60DM2AG","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STW72N60DM2AG when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}