{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STW68N65DM6-4AG","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STW68N65DM6-4AG","canonicalUrl":"https://icboms.com/stmicroelectronics/STW68N65DM6-4AG","factsUrl":"https://icboms.com/api/mcp/products/STW68N65DM6-4AG","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™, N-Channel MOSFET, 650 V, 72 A, 39 mOhm Rds(on), 118 nC Qg, TO-247-4, AEC-Q101, -55 to 150 °C.","salesMarkdown":"## 650 V N-channel MOSFET for automotive traction and DC-DC stages The STW68N65DM6-4AG: AEC-Q101 qualified for automotive applications. Input capacitance Ciss is 5900 pF at 100 V drain-source bias. This value, together with the gate resistance in the drive loop, determines the turn-on and turn-off delay — relevant for dead-time tuning in half-bridge topologies. The TO-247-4 package adds a Kelvin-source pin (the fourth pin) that separates the gate-drive return from the power current path, reducing the voltage drop in the gate loop caused by source inductance. This lowers the risk of gate ringing at high di/dt. Maximum power dissipation is 480 W at the case, but the practical dissipation is set by the junction-to-case thermal resistance and the heatsink's ability to pull heat away.","metaTitle":"STW68N65DM6-4AG MOSFET N-CH 650V 72A TO247-4, AEC-Q101","metaDescription":"STW68N65DM6-4AG N-channel 650V 72A MDmesh MOSFET in TO-247-4. 39 mOhm Rds(on), 118 nC Qg, AEC-Q101 qualified.","metaKeywords":null},"attributes":{"series":"MDmesh™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Grade":"Automotive","Series":"MDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Qualification":"AEC-Q101","Package / Case":"TO-247-4","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.75V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"39mOhm @ 36A, 10V","Power Dissipation (Max)":"480W (Tc)","Supplier Device Package":"TO-247-4","Gate Charge (Qg) (Max) @ Vgs":"118 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"5900 pF @ 100 V","Current - Continuous Drain (Id) @ 25°C":"72A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$11.84","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$11.84000","currency":"USD"},{"qty":30,"price":"$9.58800","currency":"USD"},{"qty":120,"price":"$9.02408","currency":"USD"},{"qty":510,"price":"$8.17806","currency":"USD"},{"qty":1020,"price":"$7.50125","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/7301abad9632aed54ad731559961cf56.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the difference between STW68N65DM6-4AG and STW68N65DM6?","answer":"The -4AG suffix indicates the TO-247-4 package with a Kelvin-source pin (four leads) and AEC-Q101 automotive qualification. The base STW68N65DM6 uses the standard three-pin TO-247 package and lacks the automotive-grade screening. Electrically the die is the same MDmesh™ generation, but the pinout differs — the fourth pin is the source Kelvin connection, not a drain or gate."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STW68N65DM6-4AG","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STW68N65DM6-4AG when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}