{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STW45N65M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STW45N65M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STW45N65M5","factsUrl":"https://icboms.com/api/mcp/products/STW45N65M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh V N-channel MOSFET, STW45N65M5, 650 V Vdss, 35 A continuous drain, 78 mOhm Rds(on) at 10 V, 91 nC gate charge, TO-247-3 through-hole package, 150 °C junction temperature.","salesMarkdown":"## 650 V, 35 A, 78 mOhm — the hard-switching budget The TO-247-3 through-hole package is the standard high-current, high-voltage footprint. The exposed backside tab conducts heat to the heatsink; the 150 °C maximum junction temperature gives headroom for transient overloads in motor-drive or UPS applications where the thermal time constant of the heatsink is long. ## Gate charge and switching speed Total gate charge is 91 nC at 10 V gate drive, with input capacitance of 3375 pF measured at 100 V drain. A 1 A gate driver can charge the gate to the Miller plateau in about 90 ns, supporting switching frequencies up to 100 kHz in a full-bridge topology without excessive cross-conduction losses. The 10 V drive voltage is the recommended rail for minimum Rds(on); the gate is rated ±20 V absolute maximum. The 5 V gate-threshold maximum at 250 µA drain current means the device is fully enhanced with a standard 10 V gate drive, but the threshold is high enough to resist spurious turn-on from gate ringing in a half-bridge leg.","metaTitle":"STW45N65M5 MOSFET, 650 V 35 A TO-247, 78 mOhm Rds(on)","metaDescription":"STW45N65M5 N-channel 650 V 35 A MOSFET in TO-247-3. 78 mOhm max Rds(on) at 10 V, 91 nC gate charge. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ V","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™ V","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"78mOhm @ 19.5A, 10V","Power Dissipation (Max)":"210W (Tc)","Supplier Device Package":"TO-247-3","Gate Charge (Qg) (Max) @ Vgs":"91 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"3375 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"35A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$8.84","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$8.84000","currency":"USD"},{"qty":10,"price":"$7.57300","currency":"USD"},{"qty":100,"price":"$6.31100","currency":"USD"},{"qty":500,"price":"$5.56854","currency":"USD"},{"qty":1000,"price":"$5.01168","currency":"USD"},{"qty":2000,"price":"$4.69613","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/5f896f09284cc0e481b5ddf7235c7832.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is STW45N65M5 RoHS compliant?","answer":"Yes, the STW45N65M5 is listed as ROHS3 compliant, which covers the full RoHS substance restriction without lead-exemption carve-outs."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STW45N65M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STW45N65M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}