{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STW33N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STW33N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STW33N60M2","factsUrl":"https://icboms.com/api/mcp/products/STW33N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STW33N60M2 N-channel MOSFET, MDmesh™ II Plus series, 600 V Vdss, 26 A Id, 125 mOhm Rds(on), TO-247-3 package, -55°C to 150°C junction temperature.","salesMarkdown":"## 600 V, 26 A N-channel — MDmesh™ II Plus in TO-247 At 26 A the conduction loss is I²R = 26² × 0.125 ≈ 84.5 W — that is the thermal budget the heatsink must pull from the TO-247 tab. The 45.5 nC total gate charge at 10 V sets the drive current needed: at 100 kHz switching, the average gate-drive current is Qg × f = 45.5 nC × 100 kHz = 4.55 mA, well within a standard gate-driver IC's capability. Input capacitance Ciss is 1781 pF at 100 V drain-source. That capacitance resonates with the gate-drive loop inductance; a 10 Ω to 22 Ω series gate resistor damps the ringing without slowing the turn-on beyond the application's switching loss budget. It is ROHS3 compliant. ## Thermal and mounting — heatsink required above moderate loads The TO-247-3 package is a through-hole tab-mount. At 190 W maximum dissipation, a heatsink is mandatory for any continuous current above a few amps.","metaTitle":"STW33N60M2 N-Channel MOSFET, 600 V, 26 A, TO-247","metaDescription":"STW33N60M2 N-channel MOSFET from STMicroelectronics MDmesh II Plus series. 600 V Vdss, 26 A Id, 125 mOhm Rds(on). Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ II Plus","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™ II Plus","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"125mOhm @ 13A, 10V","Power Dissipation (Max)":"190W (Tc)","Supplier Device Package":"TO-247-3","Gate Charge (Qg) (Max) @ Vgs":"45.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1781 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"26A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.53","priceTiers":[{"qty":1,"price":"$5.53000","currency":"USD"},{"qty":10,"price":"$4.64200","currency":"USD"},{"qty":100,"price":"$3.75510","currency":"USD"},{"qty":500,"price":"$3.33784","currency":"USD"},{"qty":1000,"price":"$2.85803","currency":"USD"},{"qty":2000,"price":"$2.69114","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/35dce69e2420954630a0e97df8ebf92e.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STW33N60M2/alternatives.json"},"ai":{"faq":[{"question":"Does STW33N60M2 require a heatsink?","answer":"Yes, for any continuous drain current above a few amps. The maximum power dissipation is 190 W at the case, and the TO-247 tab must be bolted to a heatsink with thermal interface material to keep the junction temperature within the -55°C to 150°C range."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STW33N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STW33N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-20T14:34:45.345Z","lastPublished":"2026-07-20T14:34:45.345Z","indexable":true}}