{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STW28NM50N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STW28NM50N","canonicalUrl":"https://icboms.com/stmicroelectronics/STW28NM50N","factsUrl":"https://icboms.com/api/mcp/products/STW28NM50N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II, STW28NM50N, N-Channel MOSFET, 500V Vdss, 21A Id, 158mOhm Rds(on) @ 10.5A 10V, TO-247-3, Through Hole, 150°C Tj.","salesMarkdown":"## 500 V N-channel MOSFET for power conversion It comes in a through-hole TO-247-3 package, built for switch-mode power supplies, power factor correction stages, and high-voltage DC-DC converters where conduction losses matter. The 158 mOhm maximum on-resistance at 10.5 A and 10 V gate drive keeps efficiency in the sweet spot for a 500 V class part. TO-247-3 is a standard through-hole package with a large tab for heatsink attachment. The three leads are spaced for easy hand-soldering or wave-solder rework. The through-hole format means the part sits off the board, so plan for adequate clearance under the body and a screw or clip for the tab to the heatsink.","metaTitle":"STW28NM50N N-Channel MOSFET, 500V 21A TO-247-3","metaDescription":"STW28NM50N N-channel 500V 21A MOSFET in TO-247-3. MDmesh™ II series, 158mOhm Rds(on) at 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ II","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"158mOhm @ 10.5A, 10V","Power Dissipation (Max)":"150W (Tc)","Supplier Device Package":"TO-247-3","Gate Charge (Qg) (Max) @ Vgs":"50 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"1735 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"21A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$7.71","priceTiers":[{"qty":1,"price":"$8.09000","currency":"USD"},{"qty":10,"price":"$7.30800","currency":"USD"},{"qty":100,"price":"$6.05000","currency":"USD"},{"qty":500,"price":"$5.61138","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/0fd91872764a2573901590d277bab9f0.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STW28NM50N/alternatives.json"},"ai":{"faq":[{"question":"What are the specifications of STW28NM50N?","answer":"Key ratings: N-channel MOSFET, 500 V drain-to-source voltage, 21 A continuous drain current at 25 °C, 158 mOhm maximum on-resistance at 10.5 A and 10 V gate drive, 50 nC gate charge at 10 V, 150 W maximum power dissipation, operating junction temperature up to 150 °C. Package is TO-247-3 through-hole."},{"question":"Is STW28NM50N RoHS compliant?","answer":"Yes, it is ROHS3 compliant."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STW28NM50N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STW28NM50N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T18:51:14.863Z","lastPublished":"2026-07-22T18:51:14.863Z","indexable":true}}