{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STW19NM50N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STW19NM50N","canonicalUrl":"https://icboms.com/stmicroelectronics/STW19NM50N","factsUrl":"https://icboms.com/api/mcp/products/STW19NM50N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II series, STW19NM50N, N-Channel MOSFET, 500V Vdss, 14A Id, 250mOhm Rds(on), 34nC Qg, TO-247-3 through-hole package.","salesMarkdown":"## 500 V N-channel MDmesh™ II MOSFET in TO-247-3 Gate charge totals 34 nC at 10 V, a figure that determines the driver's switching loss budget and the minimum drive current needed at the target frequency. This is the value used for conduction loss calculation at full load; actual on-resistance rises with junction temperature, so the thermal design must account for the positive temperature coefficient typical of MDmesh™ II devices. Input capacitance is 1000 pF at 50 V drain-source, which together with the gate charge defines the driver's peak current requirement. Housed in a TO-247-3 through-hole package, the STW19NM50N is designed for bolted mounting to a heatsink. The maximum power dissipation is 110 W at case temperature, making the thermal interface and heatsink selection the dominant factor in the junction temperature budget.","metaTitle":"STW19NM50N MDmesh™ II N-Channel MOSFET, 500V 14A TO-247-3","metaDescription":"STW19NM50N N-channel 500V 14A MOSFET in TO-247-3. 250 mOhm Rds(on), 34 nC gate charge. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ II","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"250mOhm @ 7A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"TO-247-3","Gate Charge (Qg) (Max) @ Vgs":"34 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"1000 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"14A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.99","priceTiers":[{"qty":1,"price":"$6.99000","currency":"USD"},{"qty":10,"price":"$6.28200","currency":"USD"},{"qty":100,"price":"$5.14720","currency":"USD"},{"qty":500,"price":"$4.38176","currency":"USD"},{"qty":1000,"price":"$4.35785","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/db1fe8a12e805a7cc62d5174f2d80412.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STW19NM50N/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STW19NM50N?","answer":"The maximum Rds(on) is 250 mOhm at a drain current of 7 A and a gate drive of 10 V."},{"question":"Can STW19NM50N be used as a replacement for IRFP460?","answer":"Both are 500 V N-channel MOSFETs in TO-247 packages, but the STW19NM50N has a lower Rds(on) (250 mOhm vs 0.27 Ohm typical for IRFP460) and lower gate charge (34 nC vs ~120 nC). Verify the gate drive voltage, switching frequency, and thermal requirements in your specific circuit before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STW19NM50N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STW19NM50N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-20T14:34:45.345Z","lastPublished":"2026-07-20T14:34:45.345Z","indexable":true}}