{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STW10N95K5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STW10N95K5","canonicalUrl":"https://icboms.com/stmicroelectronics/STW10N95K5","factsUrl":"https://icboms.com/api/mcp/products/STW10N95K5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH5™ STW10N95K5, N-Channel MOSFET, 950 V Vdss, 8 A continuous drain, 800 mOhm Rds(on) at 10 V, 22 nC gate charge, TO-247-3 through-hole, -55 to 150 °C junction.","salesMarkdown":"The STW10N95K5 is a 950 V, 8 A N-channel MOSFET from ST's SuperMESH5™ series, housed in a TO-247-3 through-hole package. The 950 V drain-source rating gives 50 % headroom above a 600 VDC bus, enough to ride through 800 V surge events without avalanche stress. ## Switching losses and gate drive budget Gate charge is 22 nC at 10 V drive. Input capacitance is 630 pF at 100 V drain-source. Rds(on) is 800 mOhm maximum at 4 A, 10 V. At 25 °C junction that is 3.2 W conduction loss at 4 A — the TO-247 copper tab can sink that with a modest clip-on heatsink. Above 100 °C junction the on-resistance roughly doubles, so budget the thermal path for 6–7 W at full load.","metaTitle":"STW10N95K5 N-Channel MOSFET, 950 V, 8 A, TO-247-3","metaDescription":"STW10N95K5 N-channel 950 V 8 A MOSFET in TO-247-3. Rds(on) 800 mOhm at 10 V, 22 nC gate charge, -55 to 150 °C.","metaKeywords":null},"attributes":{"series":"SuperMESH5™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"SuperMESH5™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 100µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"800mOhm @ 4A, 10V","Power Dissipation (Max)":"130W (Tc)","Supplier Device Package":"TO-247-3","Gate Charge (Qg) (Max) @ Vgs":"22 nC @ 10 V","Drain to Source Voltage (Vdss)":"950 V","Input Capacitance (Ciss) (Max) @ Vds":"630 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"8A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.32","priceTiers":[{"qty":1,"price":"$4.32000","currency":"USD"},{"qty":10,"price":"$3.62400","currency":"USD"},{"qty":100,"price":"$2.93210","currency":"USD"},{"qty":500,"price":"$2.60628","currency":"USD"},{"qty":1000,"price":"$2.23163","currency":"USD"},{"qty":2000,"price":"$2.10132","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/3d87f1d4a200546a51a6a310e0abb9f3.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STW10N95K5/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STW10N95K5?","answer":"Maximum on-resistance is 800 mOhm at 4 A drain current with 10 V gate drive. This is the worst-case figure at 25 °C junction; expect the typical value to be lower, and the actual resistance to increase with temperature."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STW10N95K5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STW10N95K5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-20T14:34:45.345Z","lastPublished":"2026-07-20T14:34:45.345Z","indexable":true}}