{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STU8N80K5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STU8N80K5","canonicalUrl":"https://icboms.com/stmicroelectronics/STU8N80K5","factsUrl":"https://icboms.com/api/mcp/products/STU8N80K5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH5™ STU8N80K5, N-channel MOSFET, 800 V Vdss, 6 A continuous drain, 950 mOhm Rds(on) at 3 A, 10 V, 16.5 nC gate charge, TO-251-3 (IPAK) through-hole package, -55°C to +150°C junction temperature.","salesMarkdown":"## 800 V N-channel in a TO-251 — where it fits It comes in a TO-251-3 (IPAK) through-hole package — a compact three-lead footprint that suits high-density PCB layouts where a TO-220 would be overkill. ## Conduction and switching — the numbers that matter That 10 V drive requirement is standard for a high-voltage MOSFET; a 12 V gate-drive supply from a bias winding or bootstrap circuit covers it cleanly. Total gate charge is 16.5 nC at Vgs = 10 V. For a 100 kHz flyback converter, the gate-drive current needed is about 1.65 mA average — easily within the capability of a small driver IC. Input capacitance Ciss is 450 pF at Vds = 100 V, which keeps the Miller plateau short and limits switching losses. ## Thermal and voltage headroom Maximum power dissipation is 110 W at case temperature 25°C. Gate-source voltage is rated ±30 V, giving margin for ringing on the gate node in a hard-switching topology. The 800 V drain-source breakdown leaves headroom for 400 VDC bus rails in single-phase PFC or flyback stages with a 20% derating margin.","metaTitle":"STU8N80K5 MOSFET, 800 V N-Channel, 6 A, TO-251 (IPAK)","metaDescription":"STMicroelectronics STU8N80K5 N-channel 800 V 6 A MOSFET in TO-251 (IPAK). Rds(on) 950 mOhm at 3 A, 10 V. 16.5 nC gate charge.","metaKeywords":null},"attributes":{"series":"SuperMESH5™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"SuperMESH5™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-251-3 Short Leads, IPak, TO-251AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 100µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"950mOhm @ 3A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"TO-251 (IPAK)","Gate Charge (Qg) (Max) @ Vgs":"16.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"450 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"6A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.38","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.50000","currency":"USD"},{"qty":10,"price":"$2.24700","currency":"USD"},{"qty":100,"price":"$1.80600","currency":"USD"},{"qty":500,"price":"$1.48382","currency":"USD"},{"qty":1000,"price":"$1.39982","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/b63776a1f91d301bd9c1c046da9506c8.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is STU8N80K5 RoHS compliant?","answer":"Yes, the STU8N80K5 is ROHS3 compliant, meeting the current EU RoHS exemption-free requirements."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STU8N80K5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STU8N80K5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}