{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STU7N65M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STU7N65M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STU7N65M2","factsUrl":"https://icboms.com/api/mcp/products/STU7N65M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ N-Channel MOSFET, 650 V drain-source voltage, 5 A continuous drain current, 1.15 Ohm Rds(on) at 10 V, TO-251 (IPAK) through-hole package.","salesMarkdown":"## 650 V, 5 A, 1.15 Ohm — the switching-loss envelope The STU7N65M2 N-channel MOSFET has a maximum Rds(on) of 1.15 Ohm at 2.5 A with 10 V gate drive, and a 650 V drain-source voltage rating. ## 9 nC gate charge — light drive, fast edges Total gate charge is 9 nC at 10 V, and input capacitance measures 270 pF at 100 V drain bias. That combination means a modest gate driver can switch this FET at tens of kHz without excessive cross-conduction losses — useful in flyback converters and auxiliary power stages where board space is tight. ## Through-hole IPAK — field-swappable Housed in a TO-251 (IPAK) through-hole package with short leads, this part is a practical field replacement candidate. The three leads are clearly spaced, and the tab is the drain — orientation is unambiguous even without a schematic in hand. No hot-air station needed; a standard iron and solder sucker get it done on site.","metaTitle":"STU7N65M2 MOSFET N-Ch 650V 5A IPAK, MDmesh","metaDescription":"STU7N65M2 N-channel MOSFET, 650 V Vdss, 5 A Id, 1.15 Ohm Rds(on) at 10 V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-251-3 Short Leads, IPak, TO-251AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.15Ohm @ 2.5A, 10V","Power Dissipation (Max)":"60W (Tc)","Supplier Device Package":"TO-251 (IPAK)","Gate Charge (Qg) (Max) @ Vgs":"9 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"270 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.61","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.61000","currency":"USD"},{"qty":10,"price":"$1.31300","currency":"USD"},{"qty":100,"price":"$1.02150","currency":"USD"},{"qty":500,"price":"$0.86582","currency":"USD"},{"qty":1000,"price":"$0.70530","currency":"USD"},{"qty":2000,"price":"$0.66396","currency":"USD"},{"qty":5000,"price":"$0.63234","currency":"USD"},{"qty":10000,"price":"$0.60316","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/7dedc0f2c2d7a9e4c2f300c641b4dc8d.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the STU7N65M2 Rds(on) and drain-source voltage?","answer":"Maximum Rds(on) is 1.15 Ohm at 2.5 A drain current with 10 V gate drive. Drain-source voltage rating is 650 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STU7N65M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STU7N65M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}