{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STU5N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STU5N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STU5N60M2","factsUrl":"https://icboms.com/api/mcp/products/STU5N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II Plus STU5N60M2, N-Channel MOSFET, 600 V Vdss, 3.7 A Id, 1.4 Ohm Rds(on) at 10 V, 4.5 nC Qg, I-PAK (TO-251) through-hole package, 150 °C junction temperature.","salesMarkdown":"## Conduction and switching — reading the numbers The STU5N60M2: At 3.7 A continuous drain current, the 1.4 Ohm Rds(on) produces conduction loss that rises with temperature. The 45 W package limit at the case provides derating headroom. Input capacitance is 165 pF at 100 V drain. The 4 V maximum gate threshold at 250 µA means the part is fully enhanced with a 10 V drive. ## Package and mounting — I-PAK in production The I-PAK (TO-251) package has short leads and a through-hole mounting style. The tab is the drain; the PCB copper area under the package sets the thermal resistance. The junction is rated to 150 °C. ## Lifecycle and supply — current production, no LTB clock The part is ROHS3 compliant.","metaTitle":"STU5N60M2 MOSFET N-Ch 600V 3.7A I-PAK, MDmesh II Plus","metaDescription":"STMicroelectronics STU5N60M2 N-channel 600V 3.7A MOSFET in I-PAK. Rds(on) 1.4 Ohm at 10V. Active production, RoHS3.","metaKeywords":null},"attributes":{"series":"MDmesh™ II Plus","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™ II Plus","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-251-3, IPak, Short Leads","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.4Ohm @ 1.85A, 10V","Power Dissipation (Max)":"45W (Tc)","Supplier Device Package":"I-PAK","Gate Charge (Qg) (Max) @ Vgs":"4.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"165 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"3.7A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.43","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.43000","currency":"USD"},{"qty":10,"price":"$1.27500","currency":"USD"},{"qty":100,"price":"$0.99420","currency":"USD"},{"qty":500,"price":"$0.82130","currency":"USD"},{"qty":1000,"price":"$0.71365","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/15d0a90ffdcb76c8a4473fa756df0f2b.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of STU5N60M2?","answer":"This value is specified at 25 °C junction temperature; on-resistance increases with temperature per the normalised curve in the datasheet."},{"question":"Can I use STU5N60M2 for a high-frequency switching application?","answer":"The 4.5 nC gate charge and 165 pF input capacitance are low for a 600 V device, so it can switch at tens of kilohertz without excessive drive losses. For frequencies above about 200 kHz, the gate-drive power and Miller-effect losses may become significant — a lower-Qg part would be a better fit for very high-frequency designs."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STU5N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STU5N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}