{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STU2LN60K3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STU2LN60K3","canonicalUrl":"https://icboms.com/stmicroelectronics/STU2LN60K3","factsUrl":"https://icboms.com/api/mcp/products/STU2LN60K3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH3™ N-channel MOSFET, 600 V, 2 A, IPAK (TO-251), 4.5 Ohm Rds(on) @ 1 A, 10 V, 12 nC gate charge, ±30 Vgs, 45 W, -55 to 150 °C junction.","salesMarkdown":"## 600 V, 2 A, 4.5 Ohm — where this MOSFET fits The STU2LN60K3 is an N-channel 600 V, 2 A power MOSFET from ST's SuperMESH3™ series, housed in a through-hole IPAK (TO-251) package. ## ±30 V Vgs — gate drive margin The ±30 V gate-source rating is double the usual ±20 V limit on many 600 V MOSFETs. That extra headroom matters when gate ringing from a hard-switched primary-side controller pushes the drive voltage above the absolute maximum — a common failure mode in compact flyback layouts where the gate-drive loop inductance is hard to minimise. ## Active lifecycle — no end-of-life clock ST lists the STU2LN60K3 as Active.","metaTitle":"STU2LN60K3 N-Channel MOSFET, 600 V, 2 A, IPAK","metaDescription":"STU2LN60K3 N-channel 600 V 2 A MOSFET in IPAK, SuperMESH3 series. 4.5 Ohm Rds(on), 12 nC gate charge, ±30 Vgs.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±30 V","series":"SuperMESH3™","has_mpn":"STU2LN60","power_w":"45.0","Fet Type":"N-Channel","package_type":"Tube","mounting_type":"Through Hole","capacitance_uf":"0.0002","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"600.0","Vgs(Th) (Max) @ Id":"4.5 V @ 50µA","switching_current_a":"2.0","Rds On (Max) @ Id, Vgs":"4.5Ohm @ 1 A, 10 V","Operating Temperature High":"150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"12 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/f10670a82c91a44ccc58893578b1e586.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STU2LN60K3/alternatives.json"},"ai":{"faq":[{"question":"What is the closest pin-compatible alternative to STU2LN60K3?","answer":"No official cross-reference or second-source alternate is listed for the STU2LN60K3. The same-family part STU2LN60 shares the basic die design; confirm the package and Rds(on) grade against your BOM before substituting."},{"question":"What does the ±30 V Vgs rating mean for the design?","answer":"The ±30 V gate-source maximum gives extra margin against gate-drive overshoot in hard-switched topologies, reducing the risk of oxide breakdown from ringing. Most 600 V MOSFETs are rated ±20 V; this part tolerates a wider transient."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STU2LN60K3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STU2LN60K3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}