{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STU10NM60N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STU10NM60N","canonicalUrl":"https://icboms.com/stmicroelectronics/STU10NM60N","factsUrl":"https://icboms.com/api/mcp/products/STU10NM60N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II series, STU10NM60N, N-Channel MOSFET, 600 V Vdss, 10 A Id, 550 mOhm Rds(on) @ 4 A, 10 V, 19 nC Qg, TO-251 (IPAK) through-hole package, -55 to 150 °C operating junction temperature.","salesMarkdown":"## 600 V, 10 A N-channel in a TO-251 — right-sized for offline flyback and PFC It comes in a through-hole TO-251 (IPAK) package with short leads, intended for high-voltage DC-DC converters, flyback supplies, and power-factor-correction stages where board space is tight but a through-hole anchor is preferred over a surface-mount DPAK. The 540 pF input capacitance at 50 V drain bias confirms the gate charge figure: the driver sees a moderate capacitive load, so rise and fall times stay under control even with a 10-15 Ohm series gate resistor. ## Thermal and mechanical — the TO-251 package reality The TO-251 (IPAK) package dissipates up to 70 W at the case, but that assumes the tab is soldered to a copper island on the PCB or clamped to a heatsink. In a typical through-hole layout with no added heatsink, the effective power dissipation drops to roughly 2-3 W before the junction hits 150 °C.","metaTitle":"STU10NM60N MOSFET N-Ch 600V 10A IPAK MDmesh II","metaDescription":"STU10NM60N N-channel MOSFET, 600V Vdss, 10A Id, 550mOhm Rds(on), 19nC Qg. Active production.","metaKeywords":null},"attributes":{"series":"MDmesh™ II","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-251-3 Short Leads, IPak, TO-251AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"550mOhm @ 4A, 10V","Power Dissipation (Max)":"70W (Tc)","Supplier Device Package":"TO-251 (IPAK)","Gate Charge (Qg) (Max) @ Vgs":"19 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"540 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"10A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.07","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$3.07000","currency":"USD"},{"qty":10,"price":"$2.75700","currency":"USD"},{"qty":100,"price":"$2.25860","currency":"USD"},{"qty":500,"price":"$1.92272","currency":"USD"},{"qty":1000,"price":"$1.91222","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/e3fc1de9b566fd453803703c87b99b71.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the difference between STU10NM60N and STF10NM60N?","answer":"The STF10NM60N is the fully isolated TO-220FP (full-pack) variant, while the STU10NM60N uses the TO-251 (IPAK) with a conductive tab. The STF version offers electrical isolation between the drain tab and the heatsink, eliminating the need for an insulating washer. The STU version is smaller and suited for wave-solder through-hole assembly where the tab can be soldered to a PCB copper area."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STU10NM60N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STU10NM60N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}