{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STTH506TTI","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STTH506TTI","canonicalUrl":"https://icboms.com/stmicroelectronics/STTH506TTI","factsUrl":"https://icboms.com/api/mcp/products/STTH506TTI","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STTH506TTI, Fast Recovery Diode, 600 V, 5 A, 25 ns trr, 1 Pair Series Connection, TO-220AB Insulated, Through Hole, Tube.","salesMarkdown":"## 600 V, 5 A, 25 ns trr — fast-recovery dual diode Its 25 ns reverse recovery time (trr) at 5 A forward current makes it suited for high-frequency switching circuits where turn-off losses drive the thermal budget. The series-connected pair allows a center-tap or snubber layout with one through-hole device, reducing assembly time versus two separate diodes. ## Obsolete — last-time-buy and replacement path STMicroelectronics lists the STTH506TTI as Obsolete. The 25 ns trr at 5 A forward current places this diode in the fast-recovery class for 600 V silicon. In a 50–100 kHz PFC or flyback converter, the recovery charge is low enough that the MOSFET turn-on losses stay manageable without a snubber. Reverse leakage at 600 V is 6 µA typ — negligible at room temperature but rises with junction temperature; the 150 °C max junction rating sets the derating ceiling for continuous operation. Forward voltage drop is 3.6 V max at 5 A — this is a trade-off for the fast recovery: expect ~18 W conduction loss per diode at full rated current, so adequate heatsinking on the TO-220AB tab is required.","metaTitle":"STTH506TTI Diode – 600V 5A Fast Recovery, 25ns trr, TO-220AB","metaDescription":"STTH506TTI fast recovery diode: 600V, 5A, 25ns trr, dual series in TO-220AB insulated.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Speed":"Fast Recovery =< 500ns, > 200mA (Io)","Series":"-","Package":"Tube","Technology":"Standard","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Base Product Number":"STTH506","Diode Configuration":"1 Pair Series Connection","Supplier Device Package":"TO-220AB Insulated","Reverse Recovery Time (trr)":"25 ns","Current - Reverse Leakage @ Vr":"6 µA @ 600 V","Voltage - DC Reverse (Vr) (Max)":"600 V","Operating Temperature - Junction":"150°C (Max)","Voltage - Forward (Vf) (Max) @ If":"3.6 V @ 5 A","Current - Average Rectified (Io) (per Diode)":"5A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STTH506TTI/alternatives.json"},"ai":{"faq":[{"question":"Is STTH506TTI obsolete?","answer":"Yes, the STTH506TTI is listed as Obsolete by STMicroelectronics. No direct replacement part number has been announced."},{"question":"What is the reverse recovery time of STTH506TTI?","answer":"The reverse recovery time (trr) is 25 ns at 5 A forward current and rated 600 V reverse voltage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STTH506TTI","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STTH506TTI when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}