{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STQ2LN60K3-AP","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STQ2LN60K3-AP","canonicalUrl":"https://icboms.com/stmicroelectronics/STQ2LN60K3-AP","factsUrl":"https://icboms.com/api/mcp/products/STQ2LN60K3-AP","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH3™ STQ2LN60K3-AP, N-Channel MOSFET, 600 V Vdss, 600 mA Id, 4.5 Ohm Rds(on), 12 nC Qg, TO-92-3 through-hole package, 150°C junction temperature.","salesMarkdown":"## 600 V, 600 mA N-channel — low-power offline switching The STQ2LN60K3-AP: The TO-92-3 through-hole package (TO-226-3, formed leads) keeps the board footprint small and suits hand-assembly or low-volume production runs. The 4.5 Ohm Rds(on) at 10 V gate drive sets the conduction loss floor: at 600 mA the I²R loss sits within the 2.5 W maximum power dissipation at the case. The 12 nC total gate charge at 10 V means a small gate-drive IC or a microcontroller GPIO with a series resistor can switch the MOSFET at tens of kilohertz without excessive drive current — a practical advantage in cost-sensitive auxiliary supplies. Input capacitance is 235 pF at 50 V drain-source, which keeps the switching node capacitance low and helps maintain efficiency in hard-switched topologies.","metaTitle":"STQ2LN60K3-AP N-Channel MOSFET, 600 V, 600 mA, TO-92-3","metaDescription":"STMicroelectronics STQ2LN60K3-AP N-channel 600 V, 600 mA MOSFET in TO-92-3. 4.5 Ohm Rds(on), 12 nC gate charge. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"SuperMESH3™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"SuperMESH3™","Package":"Tape & Box (TB); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-226-3, TO-92-3 (TO-226AA) Formed Leads","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"4.5Ohm @ 1A, 10V","Power Dissipation (Max)":"2.5W (Tc)","Supplier Device Package":"TO-92-3","Gate Charge (Qg) (Max) @ Vgs":"12 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"235 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"600mA (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.65","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.65000","currency":"USD"},{"qty":10,"price":"$0.55300","currency":"USD"},{"qty":100,"price":"$0.41310","currency":"USD"},{"qty":500,"price":"$0.32462","currency":"USD"},{"qty":1000,"price":"$0.25084","currency":"USD"},{"qty":2000,"price":"$0.24360","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/2648b5afadf29bc9c8274c8b9b9c388a.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STQ2LN60K3-AP","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STQ2LN60K3-AP when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}