{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STQ1NK80ZR-AP","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STQ1NK80ZR-AP","canonicalUrl":"https://icboms.com/stmicroelectronics/STQ1NK80ZR-AP","factsUrl":"https://icboms.com/api/mcp/products/STQ1NK80ZR-AP","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH N-Channel MOSFET, 800 V drain-source, 300 mA continuous drain, 16 Ohm on-resistance at 10 V gate drive, TO-92-3 through-hole package, -55 to 150 °C junction temperature.","salesMarkdown":"## 800 V MOSFET in a TO-92 – the auxiliary-supply workhorse The STQ1NK80ZR-AP: It is built for off-line auxiliary supplies, flyback converters, and bias rails where the primary switching transistor sees the full rectified DC bus. ## Rds(on) and gate drive – sizing the conduction loss Maximum on-resistance is 16 Ohm at 500 mA drain current with 10 V gate drive. The 3 W package limit in the TO-92-3 means thermal management is tight. Gate charge is 7.7 nC at 10 V, and input capacitance is 160 pF at 25 V drain-source – light enough that a simple gate-drive resistor from a PWM controller can switch it without a dedicated driver. ## Temperature grade and package – through-hole simplicity The TO-92-3 through-hole package with formed leads is hand-solderable and fits standard prototyping boards. Maximum gate-source voltage is ±30 V, which gives margin against ringing on the gate node in a hard-switched topology.","metaTitle":"STQ1NK80ZR-AP N-Channel MOSFET, 800 V, 300 mA, TO-92-3","metaDescription":"STMicroelectronics STQ1NK80ZR-AP SuperMESH N-channel MOSFET, 800 Vdss, 300 mA Id, 16 Ohm Rds(on), TO-92-3 package. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"SuperMESH™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"SuperMESH™","Package":"Tape & Box (TB); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-226-3, TO-92-3 (TO-226AA) Formed Leads","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"16Ohm @ 500mA, 10V","Power Dissipation (Max)":"3W (Tc)","Supplier Device Package":"TO-92-3","Gate Charge (Qg) (Max) @ Vgs":"7.7 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"160 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"300mA (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.88","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.88000","currency":"USD"},{"qty":10,"price":"$0.78600","currency":"USD"},{"qty":100,"price":"$0.61320","currency":"USD"},{"qty":500,"price":"$0.50652","currency":"USD"},{"qty":1000,"price":"$0.44012","currency":"USD"},{"qty":2000,"price":"$0.44013","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/314b54700035eb0c074cd7ee506db40a.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is STQ1NK80ZR-AP suitable for a flyback converter?","answer":"Yes, the 800 V drain-source rating and 300 mA current capability make it a fit for low-power flyback converters in auxiliary supplies, bias rails, and standby power stages."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STQ1NK80ZR-AP","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STQ1NK80ZR-AP when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}