{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STQ1HNK60R-AP","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STQ1HNK60R-AP","canonicalUrl":"https://icboms.com/stmicroelectronics/STQ1HNK60R-AP","factsUrl":"https://icboms.com/api/mcp/products/STQ1HNK60R-AP","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH™ STQ1HNK60R-AP N-channel MOSFET, 600 Vdss, 400 mA continuous drain, 8.5 Ohm Rds(on) at 10 V, 10 nC gate charge, TO-92-3 through-hole package, -55 to 150 °C operating junction temperature.","salesMarkdown":"## 600 V drain rating — where this TO-92 FET fits The 600 V Vdss puts it squarely in off-line power applications — flyback auxiliary windings, PFC startup circuits, and high-voltage DC-DC converters where the rectified 240 VAC rail peaks near 380 V, leaving a healthy 220 V derating margin for switching transients. The 8.5 Ohm maximum on-resistance at Vgs=10 V and 500 mA Id means conduction loss is the dominant thermal term at full load. At 400 mA, the dissipation in the channel alone hits 1.36 W — nearly half the 3 W case-temperature power limit — so the TO-92-3 package's thermal path to the PCB copper is the real constraint, not the silicon. ## Gate drive and switching — light load on the driver With a typical gate charge of 10 nC at Vgs=10 V and input capacitance of 156 pF at Vds=25 V, this FET presents a light load to the gate driver. A small-signal MOSFET driver or even a high-voltage gate-drive IC with 100 mA peak output can switch it at 100 kHz with under 1 W gate-drive loss — no need for a dedicated gate-drive transformer or bootstrap charge pump. The gate threshold voltage maximum of 3.7 V at 250 µA Id means a 5 V logic-level gate drive will fully enhance the channel, but the on-resistance is specified at 10 V Vgs. For designs running the gate from a 3.3 V rail, the FET may not achieve the rated Rds(on); a 10 V bias rail or a gate-drive IC with a charge pump is the safer call. ## Package and thermal — TO-92-3 realities The TO-92-3 (TO-226AA) through-hole package is a three-lead plastic body with the tab as the drain. Maximum power dissipation is 3 W at the case temperature — but in free air with no heatsink, the junction-to-ambient thermal resistance of a TO-92 typically exceeds 200 °C/W, limiting practical dissipation to under 1 W. For continuous 400 mA operation, a small clip-on heatsink or a board with generous copper area under the drain tab is necessary to keep junction temperature below 150 °C. The TO-92 body is not hermetic, so conformal coating is recommended for high-humidity or condensing environments. STMicroelectronics lists the STQ1HNK60R-AP as Active in production. The ROHS3 compliance covers current EU exemption-free requirements.","metaTitle":"STQ1HNK60R-AP N-Channel MOSFET, 600V 400mA TO-92-3","metaDescription":"STQ1HNK60R-AP N-channel 600V 400mA MOSFET in TO-92-3. 8.5Ohm Rds(on) at 10V, 10nC gate charge. Active production, ROHS3.","metaKeywords":null},"attributes":{"series":"SuperMESH™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"SuperMESH™","Package":"Tape & Box (TB); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-226-3, TO-92-3 (TO-226AA)","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.7V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"8.5Ohm @ 500mA, 10V","Power Dissipation (Max)":"3W (Tc)","Supplier Device Package":"TO-92-3","Gate Charge (Qg) (Max) @ Vgs":"10 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"156 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"400mA (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.65","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.65000","currency":"USD"},{"qty":10,"price":"$0.56000","currency":"USD"},{"qty":100,"price":"$0.38790","currency":"USD"},{"qty":500,"price":"$0.32412","currency":"USD"},{"qty":1000,"price":"$0.27585","currency":"USD"},{"qty":2000,"price":"$0.24568","currency":"USD"},{"qty":6000,"price":"$0.23275","currency":"USD"},{"qty":10000,"price":"$0.21551","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/358603866fec734544a6bc85a0687753.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STQ1HNK60R-AP","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STQ1HNK60R-AP when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}