{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STPSC8H065G-TR","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STPSC8H065G-TR","canonicalUrl":"https://icboms.com/stmicroelectronics/STPSC8H065G-TR","factsUrl":"https://icboms.com/api/mcp/products/STPSC8H065G-TR","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STPSC8H065G-TR, SiC (Silicon Carbide) Schottky diode, 650 V DC reverse voltage, 8 A average rectified current, zero reverse recovery time, D²PAK (TO-263) surface-mount package, -40 °C to 175 °C junction temperature.","salesMarkdown":"## SiC Schottky — why the recovery time matters for the PFC stage The STPSC8H065G-TR is a 650 V, 8 A silicon-carbide Schottky diode from STMicroelectronics, packaged in a D²PAK (TO-263) for surface-mount assembly. Its defining characteristic is zero reverse recovery time — the SiC Schottky barrier eliminates the stored-charge tail that forces every silicon ultrafast diode to burn switching energy at every turn-off. For a continuous-conduction-mode PFC boost stage, that zero trr directly cuts the MOSFET turn-on loss by the amount the silicon diode's reverse recovery would have cost. ## 650 V blocking and 8 A forward — sizing the power rail The 650 V reverse voltage covers universal-input PFC stages (nominal 400 V DC bus) with margin for line transients. The 8 A average forward current supports output power levels around 300 W to 1.5 kW in a boost converter, depending on the topology and cooling. Forward voltage at the rated 8 A is 1.75 V maximum — that figure sets the conduction loss at full load and drives the D²PAK pad's thermal design. The 80 µA reverse leakage at 650 V is negligible at 25 °C but doubles roughly every 10 °C junction rise, so at 150 °C junction the leakage contribution to the standby budget needs a quick check. ## D²PAK footprint — same land pattern as silicon ultrafast diodes The TO-263-3 (D²PAK) package is the standard surface-mount power-diode footprint. The STPSC8H065G-TR uses the same 2-lead-plus-tab land pattern as common silicon ultrafast diodes in this current class — a direct drop-in replacement on the PCB layout, provided the gate-drive timing in the controller accounts for the zero trr. STMicroelectronics lists the STPSC8H065G-TR as an active product.","metaTitle":"ST STPSC8H065G-TR SiC Schottky Diode, 650 V 8 A","metaDescription":"STPSC8H065G-TR: STMicroelectronics 650 V 8 A SiC Schottky diode in D²PAK. Zero reverse recovery time, 175 °C Tj max.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Speed":"No Recovery Time > 500mA (Io)","Series":"-","Package":"Tape & Reel (TR) Cut Tape (CT)","Technology":"SiC (Silicon Carbide) Schottky","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"STPSC8","Capacitance @ Vr, F":"414pF @ 0V, 1MHz","Supplier Device Package":"D²PAK","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"80 µA @ 650 V","Voltage - DC Reverse (Vr) (Max)":"650 V","Current - Average Rectified (Io)":"8A","Operating Temperature - Junction":"-40°C ~ 175°C","Voltage - Forward (Vf) (Max) @ If":"1.75 V @ 8 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.4200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/e6ef5e1f748afced2a382c31eb1f2164.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STPSC8H065G-TR/alternatives.json"},"ai":{"faq":[{"question":"What is the recovery time of STPSC8H065G-TR?","answer":"The STPSC8H065G-TR has zero reverse recovery time — the datasheet specifies 0 ns trr. This is inherent to the SiC Schottky barrier, which has no minority-carrier storage. The speed listing on the line is \"No Recovery Time > 500mA (Io).\""}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STPSC8H065G-TR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STPSC8H065G-TR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}