{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STPSC8H065DLF","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STPSC8H065DLF","canonicalUrl":"https://icboms.com/stmicroelectronics/STPSC8H065DLF","factsUrl":"https://icboms.com/api/mcp/products/STPSC8H065DLF","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STPSC8H065DLF, Silicon Carbide Schottky Diode, 650 V DC Reverse, 8 A Average Rectified, 0 ns Reverse Recovery Time, -40°C~175°C Junction, 8-PowerVDFN PowerFlat HV, Surface Mount, ECOPACK®2, Active.","salesMarkdown":"The STPSC8H065DLF is a silicon carbide Schottky diode from STMicroelectronics, rated for 650 V reverse voltage and 8 A average rectified current. ## 650 V / 8 A — derating and thermal margin Rated for 650 V reverse voltage and 1.55 V forward drop at 8 A. At 175°C junction, leakage is 80 µA at 650 V. ## PowerFlat HV package — footprint and thermal path Housed in an 8-PowerVDFN (PowerFlat 8x8 HV) surface-mount package, the exposed pad provides a low-inductance thermal path to the PCB. The 460 pF capacitance at 0 V is typical for this die size — account for it in the switching node capacitance budget when selecting the gate-drive resistor for the upstream MOSFET.","metaTitle":"ST STPSC8H065DLF SiC Schottky Diode, 650 V 8 A, 0 ns trr","metaDescription":"STMicroelectronics STPSC8H065DLF silicon carbide Schottky diode, 650 V reverse voltage, 8 A average rectified current, zero reverse recovery time.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Speed":"No Recovery Time > 500mA (Io)","Series":"ECOPACK®2","Package":"Tape & Reel (TR); Cut Tape (CT)","Diode Type":"Silicon Carbide Schottky","Mounting Type":"Surface Mount","Package / Case":"8-PowerVDFN","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"STPSC8","Capacitance @ Vr, F":"460pF @ 0V, 1MHz","Supplier Device Package":"PowerFlat™ (8x8) HV","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"80 µA @ 650 V","Voltage - DC Reverse (Vr) (Max)":"650 V","Current - Average Rectified (Io)":"8A","Operating Temperature - Junction":"-40°C~175°C","Voltage - Forward (Vf) (Max) @ If":"1.55 V @ 8 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.9200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/8172743fac15dcf58904d54a72b1f71b.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STPSC8H065DLF/alternatives.json"},"ai":{"faq":[{"question":"What is the reverse recovery time of STPSC8H065DLF?","answer":"The reverse recovery time (trr) is 0 ns. As a silicon carbide Schottky diode, it has no stored minority charge, so there is no reverse-recovery current spike during turn-off."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STPSC8H065DLF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STPSC8H065DLF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}