{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STPSC8H065DI","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STPSC8H065DI","canonicalUrl":"https://icboms.com/stmicroelectronics/STPSC8H065DI","factsUrl":"https://icboms.com/api/mcp/products/STPSC8H065DI","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STPSC8H065DI Silicon Carbide Schottky diode, 650 V Vrrm, 8 A average rectified current, TO-220AC insulated package, 175 °C junction temperature, active lifecycle.","salesMarkdown":"## 650 V / 8 A SiC Schottky — what it replaces and why The STPSC8H065DI is a 650 V, 8 A Silicon Carbide Schottky diode from STMicroelectronics, housed in a TO-220AC insulated package. Its zero reverse-recovery charge eliminates the switching losses that plague silicon ultrafast diodes in hard-switched topologies — PFC boost stages, LLC converters, and flyback snubbers all benefit. ## Forward drop and conduction loss trade-off The net loss at switching frequencies above 50 kHz usually favours the SiC part because the recovery loss term disappears. Reverse leakage at rated voltage is 80 µA, negligible for most designs. ## Package and mounting — insulated TO-220AC The TO-220AC insulated package (supplier device package TO-220AC ins) has the metal tab electrically isolated from the cathode. That saves an isolation pad and a washer when bolting to a heatsink — one less assembly step and a lower thermal resistance path. Through-hole mounting keeps it serviceable in field-repairable units.","metaTitle":"ST STPSC8H065DI SiC Schottky Diode, 650 V, 8 A, TO-220AC Ins","metaDescription":"STPSC8H065DI 650 V 8 A Silicon Carbide Schottky diode in TO-220AC insulated package. Zero reverse recovery, 175 °C Tj max.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Speed":"Fast Recovery =< 500ns, > 200mA (Io)","Series":"-","Package":"Tube","Diode Type":"Silicon Carbide Schottky","Mounting Type":"Through Hole","Package / Case":"TO-220-2 Insulated, TO-220AC","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"STPSC8","Capacitance @ Vr, F":"-","Supplier Device Package":"TO-220AC ins","Current - Reverse Leakage @ Vr":"80 µA @ 650 V","Voltage - DC Reverse (Vr) (Max)":"650 V","Current - Average Rectified (Io)":"8A","Operating Temperature - Junction":"-40°C~175°C","Voltage - Forward (Vf) (Max) @ If":"1.75 V @ 8 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.6100","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/e6ef5e1f748afced2a382c31eb1f2164.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STPSC8H065DI/alternatives.json"},"ai":{"faq":[{"question":"How does STPSC8H065DI compare to other 650 V SiC Schottky diodes?","answer":"The STPSC8H065DI competes directly with other 650 V, 8 A SiC Schottky diodes in TO-220 packages. Parametrically, the 1.75 V forward drop and 80 µA leakage at 650 V are in line with industry-standard SiC Schottky parts at this voltage and current class."},{"question":"Where can I find the datasheet for STPSC8H065DI?","answer":"The datasheet is published by STMicroelectronics under the base product number STPSC8. It covers the full electrical characteristics, thermal curves, and application notes for the STPSC8H065DI variant."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STPSC8H065DI","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STPSC8H065DI when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}