{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STPSC8H065CT","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STPSC8H065CT","canonicalUrl":"https://icboms.com/stmicroelectronics/STPSC8H065CT","factsUrl":"https://icboms.com/api/mcp/products/STPSC8H065CT","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STPSC8H065CT, Silicon Carbide Schottky Diode, 650 V, 4 A per Diode, Common Cathode, TO-220-3, Through Hole, 0 ns Reverse Recovery Time.","salesMarkdown":"## 650 V SiC Schottky — zero recovery, common-cathode pair Each diode is rated for 650 V reverse voltage and 4 A average rectified current (Io). The headline spec is the zero reverse recovery time (trr = 0 ns), which means no recovery charge to dissipate — switching losses are essentially eliminated, and the diode produces none of the ringing that a fast-recovery silicon diode would inject into the layout. A silicon fast-recovery diode has a finite trr that forces a dead-time penalty and generates a current spike that couples into the gate drive and the output. The STPSC8H065CT's zero trr eliminates that spike entirely. The forward voltage is 1.75 V max at 4 A, which is typical for a 650 V SiC Schottky — the trade-off is a slightly higher Vf than a comparable silicon hyperfast diode, but the switching-loss savings more than offset it above 50 kHz. Reverse leakage at 650 V is 40 µA, a figure that stays low at high temperature because SiC's wide bandgap holds leakage in check.","metaTitle":"ST STPSC8H065CT SiC Schottky Diode, 650 V, 4 A per Diode","metaDescription":"STPSC8H065CT is a 650 V, 4 A Silicon Carbide Schottky diode in a common-cathode TO-220-3 package. Zero reverse recovery time. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Speed":"No Recovery Time > 500mA (Io)","Series":"-","Package":"Tube","Diode Type":"Silicon Carbide Schottky","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"STPSC8","Diode Configuration":"1 Pair Common Cathode","Supplier Device Package":"TO-220","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"40 µA @ 650 V","Voltage - DC Reverse (Vr) (Max)":"650 V","Operating Temperature - Junction":"-40°C~175°C","Voltage - Forward (Vf) (Max) @ If":"1.75 V @ 4 A","Current - Average Rectified (Io) (per Diode)":"4A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.1500","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/21e9194708327da8a48bb37e0e117ebb.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STPSC8H065CT/alternatives.json"},"ai":{"faq":[{"question":"Is STPSC8H065CT a common cathode diode?","answer":"Yes, the diode configuration is 1 pair common cathode, meaning the cathodes of both diodes are internally connected to the same pin. This is the standard arrangement for a dual-diode in a TO-220 package used in PFC and boost converters."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STPSC8H065CT","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STPSC8H065CT when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}