{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STPSC806G-TR","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STPSC806G-TR","canonicalUrl":"https://icboms.com/stmicroelectronics/STPSC806G-TR","factsUrl":"https://icboms.com/api/mcp/products/STPSC806G-TR","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STPSC806G-TR, Silicon Carbide Schottky Diode, 600 V DC Reverse Voltage (Max), 8 A Average Rectified Current, D²PAK Surface Mount, -40°C~175°C Junction.","salesMarkdown":"## What the 600 V / 8 A rating means for the power stage Its zero reverse recovery time (trr = 0 ns) eliminates the switching losses that plague ultrafast silicon diodes in hard-switched topologies — PFC boost stages, flyback clamp circuits, and LLC resonant rectifiers all benefit from the absence of reverse-recovery charge. The junction is rated to 175°C, so the thermal derating curve stays usable even in a compact layout with limited copper area on the cathode tab. ## Forward drop and leakage — the conduction trade-off At 8 A the forward voltage is 1.7 V max. Reverse leakage at 600 V is 100 µA. The D²PAK footprint is standard for 8 A power diodes. The exposed cathode tab carries the bulk of the heat. STMicroelectronics lists the STPSC806G-TR as Active.","metaTitle":"STPSC806G-TR SiC Schottky Diode, 600 V 8 A, D²PAK","metaDescription":"STPSC806G-TR 600 V 8 A Silicon Carbide Schottky diode in D²PAK. Zero reverse recovery, 175°C junction temp.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Speed":"No Recovery Time > 500mA (Io)","Series":"-","Package":"Tape & Reel (TR); Cut Tape (CT)","Diode Type":"Silicon Carbide Schottky","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"STPSC806","Capacitance @ Vr, F":"450pF @ 0V, 1MHz","Supplier Device Package":"D²PAK","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"100 µA @ 600 V","Voltage - DC Reverse (Vr) (Max)":"600 V","Current - Average Rectified (Io)":"8A","Operating Temperature - Junction":"-40°C~175°C","Voltage - Forward (Vf) (Max) @ If":"1.7 V @ 8 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.4500","priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STPSC806G-TR/alternatives.json"},"ai":{"faq":[{"question":"Is STPSC806G-TR a SiC diode?","answer":"Yes. The STPSC806G-TR is a Silicon Carbide Schottky diode, which means it has zero reverse recovery time (trr = 0 ns) and handles 600 V blocking with 8 A average forward current."},{"question":"What is the difference between STPSC806G-TR and STPSC806G?","answer":"The STPSC806G-TR is the Tape & Reel packaged variant of the STPSC806G. The die and electrical specifications are identical; the -TR suffix denotes the reel format for pick-and-place assembly."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STPSC806G-TR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STPSC806G-TR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}