{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STPSC6H065G-TR","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STPSC6H065G-TR","canonicalUrl":"https://icboms.com/stmicroelectronics/STPSC6H065G-TR","factsUrl":"https://icboms.com/api/mcp/products/STPSC6H065G-TR","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STPSC6H065G-TR SiC Schottky diode, 650 V, 6 A, zero reverse recovery, D²PAK, surface mount, -40°C to 175°C junction.","salesMarkdown":"## SiC Schottky — zero recovery, hard-switching workhorse The STPSC6H065G-TR is a 650 V, 6 A silicon-carbide Schottky diode from STMicroelectronics, housed in a D²PAK surface-mount package. A conventional ultrafast diode with a 30 ns trr still dumps a current spike into the switch every cycle. This SiC part has no recovery tail at all — the current through it simply stops when the voltage reverses. That cleans up the switching node ringing and reduces the snubber requirements. The 300 pF capacitance at 0 V is typical for a 6 A SiC die; it will charge and discharge every cycle, so the effective switching loss is dominated by the output capacitance term, not recovery charge. ## Forward drop and leakage at temperature Maximum forward voltage is 1.75 V at 6 A. That is higher than a comparable ultrafast silicon diode, but the zero-recovery benefit usually outweighs the conduction loss in designs above 100 kHz. Reverse leakage is 60 µA at 650 V — expect it to rise with junction temperature, but SiC leakage stays well below silicon at high temperature, which is one reason the junction can be rated to 175 °C.","metaTitle":"ST STPSC6H065G-TR SiC Schottky Diode, 650 V, 6 A, D²PAK","metaDescription":"STPSC6H065G-TR SiC Schottky diode: 650 V reverse voltage, 6 A average rectified current, zero reverse recovery. Active lifecycle. RoHS compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Speed":"No Recovery Time > 500mA (Io)","Series":"-","Package":"Tape & Reel (TR) Cut Tape (CT)","Technology":"SiC (Silicon Carbide) Schottky","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"STPSC6","Capacitance @ Vr, F":"300pF @ 0V, 1MHz","Supplier Device Package":"D²PAK","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"60 µA @ 650 V","Voltage - DC Reverse (Vr) (Max)":"650 V","Current - Average Rectified (Io)":"6A","Operating Temperature - Junction":"-40°C ~ 175°C","Voltage - Forward (Vf) (Max) @ If":"1.75 V @ 6 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.8500","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/ef08305e55b2b0951bc8c679c4d45e5c.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STPSC6H065G-TR/alternatives.json"},"ai":{"faq":[{"question":"What is the equivalent or replacement for STPSC6H065G-TR?","answer":"Other 650 V, 6 A SiC Schottky diodes in D²PAK exist from competitors, but pinout and thermal pad layout should be verified against the target PCB before substitution."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STPSC6H065G-TR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STPSC6H065G-TR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}