{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STPSC606G-TR","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STPSC606G-TR","canonicalUrl":"https://icboms.com/stmicroelectronics/STPSC606G-TR","factsUrl":"https://icboms.com/api/mcp/products/STPSC606G-TR","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STPSC606G-TR Silicon Carbide Schottky Diode, 600 V DC reverse, 6 A average rectified, zero reverse recovery time, D2PAK surface-mount package.","salesMarkdown":"## Zero reverse recovery — the SiC switching advantage That eliminates the switching loss spike that limits silicon ultrafast diodes in hard-switched topologies. ## 175 °C junction — thermal headroom for dense power stages The 1.7 V forward drop at 6 A and 75 µA reverse leakage at 600 V are typical values at 25 °C; the SiC material keeps leakage under control well above 100 °C, unlike silicon Schottky diodes that run away thermally. ## D2PAK footprint — reflow-ready with exposed tab The tab is the drain/cathode connection. Standard reflow profiles for lead-free solder apply; the package is compatible with tape-and-reel (TR) or cut-tape (CT) quantities for prototyping or production.","metaTitle":"STPSC606G-TR SiC Schottky Diode, 600 V 6 A, Zero trr","metaDescription":"STPSC606G-TR Silicon Carbide Schottky diode, 600 V reverse, 6 A average rectified, zero reverse recovery time. D2PAK surface mount. Active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Speed":"No Recovery Time > 500mA (Io)","Series":"-","Package":"Tape & Reel (TR); Cut Tape (CT)","Diode Type":"Silicon Carbide Schottky","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"STPSC606","Capacitance @ Vr, F":"375pF @ 0V, 1MHz","Supplier Device Package":"D2PAK","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"75 µA @ 600 V","Voltage - DC Reverse (Vr) (Max)":"600 V","Current - Average Rectified (Io)":"6A","Operating Temperature - Junction":"-40°C~175°C","Voltage - Forward (Vf) (Max) @ If":"1.7 V @ 6 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.0900","priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STPSC606G-TR/alternatives.json"},"ai":{"faq":[{"question":"What is the reverse recovery time of STPSC606G-TR?","answer":"The reverse recovery time (trr) is 0 ns. As a Silicon Carbide Schottky diode, it has no minority carrier storage and therefore no reverse recovery charge — it switches off instantly at any forward current and junction temperature."},{"question":"Can STPSC606G-TR replace a standard ultrafast silicon diode in a PFC boost stage?","answer":"Yes, in most hard-switched topologies the SiC Schottky eliminates the reverse-recovery loss that limits silicon ultrafast diodes. The 600 V / 6 A rating and D2PAK footprint are direct replacements for common TO-263-packaged ultrafast diodes. The trade-off is a slightly higher forward voltage (1.7 V at 6 A) versus a silicon part, but the switching-loss savings typically more than compensate above 50 kHz."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STPSC606G-TR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STPSC606G-TR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}