{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STPSC4H065DLF","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STPSC4H065DLF","canonicalUrl":"https://icboms.com/stmicroelectronics/STPSC4H065DLF","factsUrl":"https://icboms.com/api/mcp/products/STPSC4H065DLF","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STPSC4H065DLF, Silicon Carbide Schottky Diode, 650 V, 4 A, Zero Reverse Recovery Time, Surface Mount, 8-PowerVDFN PowerFlat HV, -40°C to 175°C Junction.","salesMarkdown":"## 650 V / 4 A SiC Schottky — Zero trr in a PowerFlat package The STPSC4H065DLF is a silicon carbide Schottky diode from STMicroelectronics, rated for 650 V reverse voltage and 4 A average rectified current. ## What the zero trr means for your BOM Because the reverse recovery time is 0 ns, you can run this diode at higher frequencies without the thermal penalty of a silicon part. The forward voltage drop is 1.55 V at 4 A — higher than a comparable silicon Schottky, but the switching loss saving more than compensates above about 50 kHz. The 245 pF capacitance at 0 V is typical for a 4 A SiC die; it does not cause the ringing you would see from a silicon diode's reverse recovery snap-off. It comes in an 8-PowerVDFN PowerFlat HV package — a surface-mount 8x8 mm exposed-paddle design. It is part of the ECOPACK®2 series, meaning it is RoHS compliant and halogen-free per ST's material declaration.","metaTitle":"STPSC4H065DLF SiC Schottky Diode, 650 V, 4 A, Zero trr","metaDescription":"STMicroelectronics STPSC4H065DLF silicon carbide Schottky diode, 650 V reverse, 4 A average, zero reverse recovery time.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Speed":"No Recovery Time > 500mA (Io)","Series":"ECOPACK®2","Package":"Tape & Reel (TR); Cut Tape (CT)","Diode Type":"Silicon Carbide Schottky","Mounting Type":"Surface Mount","Package / Case":"8-PowerVDFN","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"STPSC4","Capacitance @ Vr, F":"245pF @ 0V, 1MHz","Supplier Device Package":"PowerFlat™ (8x8) HV","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"40 µA @ 650 V","Voltage - DC Reverse (Vr) (Max)":"650 V","Current - Average Rectified (Io)":"4A","Operating Temperature - Junction":"-40°C~175°C","Voltage - Forward (Vf) (Max) @ If":"1.55 V @ 4 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.4900","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/648a0b932d9d784ff28d341f57476f54.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STPSC4H065DLF/alternatives.json"},"ai":{"faq":[{"question":"What is the closest pin-compatible alternative to STPSC4H065DLF?","answer":"No official cross-reference or second-source alternate is recorded for this specific order code. For a similar SiC Schottky in the same package and voltage class, look at other 650 V, 4 A SiC diodes in the PowerFlat HV footprint — but confirm pinout and thermal pad compatibility from each datasheet."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STPSC4H065DLF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STPSC4H065DLF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}