{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STPSC2H065B-TR","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STPSC2H065B-TR","canonicalUrl":"https://icboms.com/stmicroelectronics/STPSC2H065B-TR","factsUrl":"https://icboms.com/api/mcp/products/STPSC2H065B-TR","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STPSC2H065B-TR, Silicon Carbide Schottky Diode, 650 V Vr, 2 A Io, No Recovery Time > 500 mA, DPAK (TO-252) surface-mount package, -40°C to 175°C junction temperature.","salesMarkdown":"## SiC Schottky — what the zero-recovery rating means for your power stage Its defining characteristic is the zero reverse-recovery charge — listed as No Recovery Time > 500 mA — which eliminates the switching losses and ringing that plague ultrafast silicon diodes in hard-switched PFC, flyback, and boost converters. ## Forward drop and leakage — the conduction-loss trade-off At the rated 2 A forward current, the maximum forward voltage is 1.55 V. That is typical for a 650 V SiC Schottky at this current density — the wide-bandgap material trades a slightly higher Vf than a comparable ultrafast silicon diode for the elimination of recovery losses. Reverse leakage at 650 V is 20 µA, which stays low across temperature compared to silicon, so standby power in a lightly loaded supply stays under control. ## Junction capacitance and switching behaviour Capacitance at 0 V bias is 135 pF measured at 1 MHz. Because SiC Schottky capacitance is relatively voltage-independent compared to a PN diode, the switching energy per cycle is predictable across the load range. In a continuous-conduction-mode PFC stage, the zero recovery means the MOSFET turns on into a diode that is already off — no reverse-recovery current spike, so the EMI filter sees less high-frequency content. The DPAK (TO-252) package is a single-gauge leadframe with the tab as the cathode. Will it survive the hot air? Yes — DPAK is one of the easier power packages to hand-rework: preheat the board from the back, hit the tab with a wide nozzle at 350°C, and lift the part without lifting the pad. Orientation is unambiguous — the tab is the cathode, the anode is the short pin opposite the tab. No pin-1 confusion.","metaTitle":"STPSC2H065B-TR Silicon Carbide Schottky Diode, 650 V, 2 A","metaDescription":"STPSC2H065B-TR SiC Schottky diode from STMicroelectronics: 650 V reverse voltage, 2 A average rectified current, zero recovery time, DPAK package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Speed":"No Recovery Time > 500mA (Io)","Series":"-","Package":"Tape & Reel (TR); Cut Tape (CT)","Diode Type":"Silicon Carbide Schottky","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"STPSC2","Capacitance @ Vr, F":"135pF @ 0V, 1MHz","Supplier Device Package":"DPAK","Current - Reverse Leakage @ Vr":"20 µA @ 650 V","Voltage - DC Reverse (Vr) (Max)":"650 V","Current - Average Rectified (Io)":"2A","Operating Temperature - Junction":"-40°C~175°C","Voltage - Forward (Vf) (Max) @ If":"1.55 V @ 2 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.5900","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/13ff7a26181d0b947758f25fbddf1c80.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the STPSC2H065B-TR equivalent or replacement?","answer":"The STPSC2H065B-TR is a 650 V, 2 A SiC Schottky in DPAK. Pin-compatible alternatives from other SiC diode manufacturers exist (e.g., Wolfspeed C3D02065E, GeneSiC G3S02065A), but verify forward voltage, capacitance, and leakage against your thermal and switching budget — the zero-recovery characteristic is common across SiC Schottkys, but parametric differences matter for the specific operating point."},{"question":"Where can I find the STPSC2H065B-TR datasheet?","answer":"The STPSC2H065B-TR datasheet is available from STMicroelectronics' website or through the distributor's product page. It contains the full electrical characteristics, thermal curves, and recommended PCB layout for the DPAK package."},{"question":"What is the STPSC2H065B-TR's listed speed?","answer":"The STPSC2H065B-TR is rated for No Recovery Time > 500 mA (Io). This means the diode exhibits zero reverse-recovery charge at forward currents above 500 mA — the defining advantage of a SiC Schottky over an ultrafast silicon diode."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STPSC2H065B-TR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STPSC2H065B-TR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}