{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STPSC20H12G-TR","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STPSC20H12G-TR","canonicalUrl":"https://icboms.com/stmicroelectronics/STPSC20H12G-TR","factsUrl":"https://icboms.com/api/mcp/products/STPSC20H12G-TR","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STPSC20H12G-TR, Silicon Carbide Schottky Diode, 1200 V DC Reverse, 20 A Average Rectified, 0 ns Reverse Recovery, -40°C~175°C Junction, D²PAK, Surface Mount, ECOPACK®2.","salesMarkdown":"The STPSC20H12G-TR is a Silicon Carbide Schottky diode rated for 1200 V reverse voltage and 20 A average rectified current. That eliminates the switching loss spike that plagues ultrafast silicon diodes at high frequency, so the heatsink runs cooler and the MOSFET or IGBT sees less turn-on stress. ## 1200 V blocking, 20 A forward — sizing for PFC and inverter stages With 1200 V DC reverse maximum and 20 A forward average, this diode fits continuous-conduction-mode PFC boost stages in 1–3 kW supplies, solar microinverters, and on-board EV chargers. The forward voltage drop is 1.5 V at 20 A — typical for a SiC Schottky of this die size — and the reverse leakage at rated voltage is 120 µA, which matters more at high junction temperature than at 25 °C. ## 175 °C junction — thermal budget for dense power layouts That 175 °C ceiling gives real headroom in a cramped D²PAK footprint when the ambient inside the enclosure hits 85–105 °C. The 1650 pF capacitance at 0 V is typical for a 20 A SiC die — account for it in the gate-driver loop if you are switching above 100 kHz. STMicroelectronics lists the STPSC20H12G-TR as Active.","metaTitle":"STPSC20H12G-TR SiC Schottky Diode, 1200 V, 20 A, D²PAK","metaDescription":"STPSC20H12G-TR Silicon Carbide Schottky diode, 1200 V reverse voltage, 20 A average rectified current, 0 ns trr, -40 to 175 °C junction.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Speed":"No Recovery Time > 500mA (Io)","Series":"ECOPACK®2","Package":"Tape & Reel (TR); Cut Tape (CT)","Diode Type":"Silicon Carbide Schottky","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"STPSC20","Capacitance @ Vr, F":"1650pF @ 0V, 1MHz","Supplier Device Package":"D²PAK","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"120 µA @ 1200 V","Voltage - DC Reverse (Vr) (Max)":"1200 V","Current - Average Rectified (Io)":"20A","Operating Temperature - Junction":"-40°C~175°C","Voltage - Forward (Vf) (Max) @ If":"1.5 V @ 20 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$11.4200","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/0a72a0d17a0b1e0d22428bf7c4bf1892.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can STPSC20H12G-TR replace a standard ultrafast diode?","answer":"Yes, in most hard-switching topologies the SiC Schottky's 0 ns reverse recovery eliminates the turn-on loss and snappy-recovery ringing that an ultrafast silicon diode produces. The trade-off is higher forward voltage drop at light load and a higher upfront cost per amp. The D²PAK footprint is common, so the board layout often needs no change."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STPSC20H12G-TR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STPSC20H12G-TR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}