{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STPSC20065W","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STPSC20065W","canonicalUrl":"https://icboms.com/stmicroelectronics/STPSC20065W","factsUrl":"https://icboms.com/api/mcp/products/STPSC20065W","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STPSC20065W SiC (Silicon Carbide) Schottky diode, 20 A average rectified, 650 V reverse voltage, zero recovery time, DO-247-2 through-hole package, -40 to 175°C junction.","salesMarkdown":"## SiC Schottky — zero recovery, no trade-off The STPSC20065W is a 650 V, 20 A silicon-carbide Schottky diode from STMicroelectronics, part of the ECOPACK®2 series. ## 20 A average, 650 V blocking — sizing the power stage Rated for 20 A average rectified current (Io) and 650 V DC reverse voltage (Vr). The forward drop maxes at 1.45 V at 20 A, so conduction loss at full load sits around 29 W — plan the heatsink accordingly. The DO-247 through-hole package handles the dissipation if you bolt it to a properly sized heatsink with good thermal interface. ## 175°C junction — margin for the hot end That 175°C upper limit gives you headroom in a motor-drive cabinet or a sealed power supply where ambient can hit 85°C and the diode is the hottest component on the board. Reverse leakage is 300 µA at 650 V — a nonissue at rated voltage, but worth derating if you push the junction near the limit.","metaTitle":"STPSC20065W SiC Schottky Diode, 20 A 650 V, DO-247","metaDescription":"STPSC20065W SiC Schottky diode, 20 A average rectified, 650 V reverse voltage, zero recovery time, 175°C junction. Active, available to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Speed":"No Recovery Time > 500mA (Io)","Series":"ECOPACK®2","Package":"Tube","Technology":"SiC (Silicon Carbide) Schottky","Mounting Type":"Through Hole","Package / Case":"DO-247-2 (Straight Leads)","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"STPSC20065","Capacitance @ Vr, F":"1250pF @ 0V, 1MHz","Supplier Device Package":"DO-247","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"300 µA @ 650 V","Voltage - DC Reverse (Vr) (Max)":"650 V","Current - Average Rectified (Io)":"20A","Operating Temperature - Junction":"-40°C ~ 175°C","Voltage - Forward (Vf) (Max) @ If":"1.45 V @ 20 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.1800","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/d1c05f5acffa9deb82e2d20cd6149236.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What does 'No Recovery Time > 500mA (Io)' mean?","answer":"It means the diode exhibits zero reverse-recovery time (0 ns trr) when switching from a forward current greater than 500 mA. This is inherent to SiC Schottky technology — no stored charge, so no recovery tail. The practical benefit is dramatically lower switching losses and reduced EMI compared to a silicon ultrafast diode."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STPSC20065W","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STPSC20065W when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}