{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STPSC20065GY-TR","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STPSC20065GY-TR","canonicalUrl":"https://icboms.com/stmicroelectronics/STPSC20065GY-TR","factsUrl":"https://icboms.com/api/mcp/products/STPSC20065GY-TR","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STPSC20065GY-TR, Silicon Carbide Schottky Diode, 650 V DC reverse, 20 A average rectified, 0 ns reverse recovery, AEC-Q101 qualified, D²PAK surface-mount package.","salesMarkdown":"## SiC Schottky diode for hard-switching power stages Its zero stored charge means the reverse recovery time is 0 ns — no recovery tail, no switching loss, and minimal ringing in hard-switched topologies like PFC, boost converters, and traction inverters. ## Automotive-grade qualification and package The D²PAK (TO-263) surface-mount package with two leads and a tab allows the tab to be soldered to the PCB copper for thermal management, a standard footprint in automotive power modules. ## Forward drop and leakage at rated current At 20 A forward current the maximum forward voltage is 1.45 V. Reverse leakage at 600 V is 150 µA, typical for a 650 V SiC Schottky at high temperature. The junction capacitance measures 1250 pF at 0 V bias and 1 MHz, which influences switching losses at high frequency.","metaTitle":"STPSC20065GY-TR SiC Schottky Diode, 650V 20A, AEC-Q101","metaDescription":"STPSC20065GY-TR Silicon Carbide Schottky diode: 650V, 20A average rectified, 0ns reverse recovery, AEC-Q101 automotive qualified, D²PAK surface mount.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Speed":"No Recovery Time > 500mA (Io)","Series":"Automotive, AEC-Q101, ECOPACK®2","Package":"Tape & Reel (TR); Cut Tape (CT)","Diode Type":"Silicon Carbide Schottky","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"STPSC20065","Capacitance @ Vr, F":"1250pF @ 0V, 1MHz","Supplier Device Package":"D²PAK","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"150 µA @ 600 V","Voltage - DC Reverse (Vr) (Max)":"650 V","Current - Average Rectified (Io)":"20A","Operating Temperature - Junction":"-40°C~175°C","Voltage - Forward (Vf) (Max) @ If":"1.45 V @ 20 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.9000","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/64ed2adc7034e30362ecdaff99dec0d2.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the reverse recovery time of STPSC20065GY-TR?","answer":"The STPSC20065GY-TR has a reverse recovery time of 0 ns — it is a Silicon Carbide Schottky diode with no stored charge, so there is no recovery tail."},{"question":"Is STPSC20065GY-TR automotive qualified?","answer":"Yes, it is AEC-Q101 qualified and belongs to the Automotive series, suitable for under-hood and chassis-domain power electronics."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STPSC20065GY-TR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STPSC20065GY-TR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}