{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STPSC15H12DY","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STPSC15H12DY","canonicalUrl":"https://icboms.com/stmicroelectronics/STPSC15H12DY","factsUrl":"https://icboms.com/api/mcp/products/STPSC15H12DY","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STPSC15H12DY Silicon Carbide Schottky diode, 1200 V, 15 A, zero reverse recovery time, AEC-Q101 automotive qualified, TO-220-2 through-hole package.","salesMarkdown":"## Zero-reverse-recovery SiC Schottky for hard-switched power stages The STMicroelectronics STPSC15H12DY is a 1200 V, 15 A Silicon Carbide Schottky diode in a TO-220-2 through-hole package. ## 1200 V blocking, 15 A average — derating headroom in a TO-220 Rated for 15 A average rectified current at a 1200 V DC reverse voltage, with a forward voltage drop of 1.5 V max at 15 A. The 1200pF capacitance at 0 V, 1 MHz is typical for a 15 A SiC die — the junction capacitance charges and discharges with negligible stored charge, so the switching energy is dominated by the output capacitance, not reverse recovery. The 90 µA reverse leakage at 1200 V is a room-temperature figure; SiC leakage rises with temperature, but stays well below silicon levels at the same junction temperature. ## AEC-Q101 qualified — under-hood and chassis-domain ready This part carries AEC-Q101 automotive qualification (series designation Automotive, AEC-Q101), covering the additional stress tests — high-temperature reverse bias, temperature cycling, and humidity — required for engine bay and transmission-mounted power electronics. The TO-220-2 package (supplier device package TO-220AC) is a standard through-hole footprint for heatsink-mounting in industrial and automotive power stages. Lifecycle status is listed as Active. The base product number STPSC15 covers the 15 A SiC family across different package and qualification variants; the DY suffix specifically marks the AEC-Q101 TO-220-2 version.","metaTitle":"STPSC15H12DY SiC Schottky Diode, 15A 1200V, AEC-Q101","metaDescription":"STPSC15H12DY Silicon Carbide Schottky diode, 15 A average rectified current at 1200 V, zero reverse recovery time, AEC-Q101 qualified, TO-220-2 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Speed":"No Recovery Time > 500mA (Io)","Series":"Automotive, AEC-Q101","Package":"Tube","Diode Type":"Silicon Carbide Schottky","Mounting Type":"Through Hole","Package / Case":"TO-220-2","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"STPSC15","Capacitance @ Vr, F":"1200pF @ 0V, 1MHz","Supplier Device Package":"TO-220AC","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"90 µA @ 1200 V","Voltage - DC Reverse (Vr) (Max)":"1200 V","Current - Average Rectified (Io)":"15A","Operating Temperature - Junction":"-40°C~175°C","Voltage - Forward (Vf) (Max) @ If":"1.5 V @ 15 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$9.3400","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/d760661386cc80a3cb5abbddc72cccaa.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is STPSC15H12DY automotive qualified?","answer":"Yes. The series designation is Automotive, AEC-Q101, covering the qualification tests required for automotive power electronics."},{"question":"Can STPSC15H12DY replace STPSC15H12D?","answer":"The STPSC15H12D is the non-automotive variant of the same 15 A, 1200 V SiC Schottky die in the same TO-220-2 package. The DY suffix adds AEC-Q101 qualification; electrically the two parts are identical. If the BOM requires automotive-grade parts, the DY is the correct fit."},{"question":"Is STPSC15H12DY suitable for high-frequency switching?","answer":"Yes. The zero reverse recovery time (trr = 0 ns) means there is no stored-charge turn-off loss, which is the dominant switching loss mechanism in silicon diodes above 50 kHz. The switching energy is limited by the junction capacitance (1200pF at 0 V) and the circuit parasitics, not reverse recovery."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STPSC15H12DY","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STPSC15H12DY when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}