{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STPSC12065DY","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STPSC12065DY","canonicalUrl":"https://icboms.com/stmicroelectronics/STPSC12065DY","factsUrl":"https://icboms.com/api/mcp/products/STPSC12065DY","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STPSC12065DY, ECOPACK®2 series, SiC (Silicon Carbide) Schottky diode, 650 V reverse voltage, 12 A average rectified current, zero reverse recovery time, AEC-Q101 qualified, TO-220AC through-hole package.","salesMarkdown":"## SiC Schottky for automotive power stages The STPSC12065DY is a 650 V, 12 A silicon carbide Schottky diode from STMicroelectronics, part of the ECOPACK®2 series. It is designed for hard-switched power conversion in automotive environments — on-board chargers, DC-DC converters, and PFC stages where the zero-reverse-recovery characteristic directly cuts switching losses and EMI. The reverse recovery time is 0 ns, which is inherent to the SiC Schottky barrier — there is no minority carrier storage to sweep out. In a continuous-conduction-mode PFC or a hard-switched full-bridge, this eliminates the reverse-recovery current spike that costs a silicon ultrafast diode in turn-off loss and ringing. The 750 pF capacitance at 0 V, 1 MHz is the junction capacitance you see in the switching loop; it is lower than an equivalent-rated silicon diode, so the capacitive turn-on loss is also reduced. The forward voltage drop is 1.45 V maximum at 12 A, 25 °C junction. That is the conduction loss floor at rated current — derate for the positive temperature coefficient as the die heats up. The 50 µA reverse leakage at 600 V, 25 °C is typical for a 650 V SiC Schottky; leakage doubles every 10 °C rise, so at 175 °C junction it dominates the off-state loss budget. The base product number is STPSC12065, and the DY suffix denotes the TO-220AC package and the automotive grade. Through-hole TO-220AC package, two leads, with the tab as the cathode. The mounting hole is sized for an M3 screw; the tab must be electrically isolated from the heatsink unless the heatsink is at the cathode potential. The package ships in tube form.","metaTitle":"STPSC12065DY SiC Schottky Diode, 650 V, 12 A, AEC-Q101","metaDescription":"STPSC12065DY automotive-grade SiC Schottky diode: 650 V reverse voltage, 12 A forward current, zero reverse recovery time. TO-220AC package.","metaKeywords":null},"attributes":{"series":"ECOPACK®2","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Grade":"Automotive","Speed":"No Recovery Time > 500mA (Io)","Series":"ECOPACK®2","Package":"Tube","Technology":"SiC (Silicon Carbide) Schottky","Mounting Type":"Through Hole","Qualification":"AEC-Q101","Package / Case":"TO-220-2","Product Status":"Active","lifecycle_stage":"eol_hot","Base Product Number":"STPSC12065","Capacitance @ Vr, F":"750pF @ 0V, 1MHz","Supplier Device Package":"TO-220AC","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"50 µA @ 600 V","Voltage - DC Reverse (Vr) (Max)":"650 V","Current - Average Rectified (Io)":"12A","Operating Temperature - Junction":"-40°C ~ 175°C","Voltage - Forward (Vf) (Max) @ If":"1.45 V @ 12 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.0000","priceTiers":[{"qty":1,"price":"$5.00000","currency":"USD"},{"qty":10,"price":"$4.19900","currency":"USD"},{"qty":100,"price":"$3.39690","currency":"USD"},{"qty":500,"price":"$3.01950","currency":"USD"},{"qty":1000,"price":"$2.58544","currency":"USD"},{"qty":2000,"price":"$2.43447","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/c3e41f525fc4d731febd77e5ecb70235.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STPSC12065DY/alternatives.json"},"ai":{"faq":[{"question":"Is STPSC12065DY AEC-Q101 qualified?","answer":"Yes, the STPSC12065DY is AEC-Q101 qualified, making it suitable for automotive applications that require the stress-test and reliability screening defined by the standard."},{"question":"What is the reverse recovery time of STPSC12065DY?","answer":"The reverse recovery time is 0 ns. As a SiC Schottky diode, it has no minority carrier storage, so there is no reverse-recovery charge — the diode turns off immediately when the current crosses zero."},{"question":"What package is STPSC12065DY in?","answer":"The STPSC12065DY is in a TO-220AC through-hole package, which is the two-lead variant of the TO-220 family with the tab as the cathode terminal."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STPSC12065DY","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STPSC12065DY when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}